Tungsten Doped Indium Oxide Thin Films Deposited at Room Temperature by Radio Frequency Magnetron Sputtering

Pan Jiaojiao, Wang Wenwen^*, Wu Dongqi, Fu Qiang, Ma Ding

Fig. 1. XRD pattern of IWO film deposited at room temperature with different sputtering power of 50 W a, 80 W b, 90 W c and the same deposition time of 25 min.