Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation

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J Mater Sci Technol ›› 2001, Vol. 17 ›› Issue (01): 41-42.

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Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation

X.B. Tian, L.P. Wang, D. T.K.Kwok, B. Y Tang, P.K.Chu

Department of Physics & Materials Science, City University of Hong Kong, Hong Kong, China

Received:2000-04-25 Revised:1900-01-01 Online:2001-01-28 Published:2009-10-10
Contact: P.K.Chu

Abstract

Abstract: Plasma immersion ion implantation (PIII) is an excellent technique for the surf see modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the process and cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.

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X.B. Tian, L.P. Wang, D. T.K.Kwok, B. Y Tang, P.K.Chu. Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation[J]. J Mater Sci Technol, 2001, 17(01): 41-42.

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Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation

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