[1]J.T.Hu,T.W.Odom and C.M.Lieber:Acconts Chem. Res.,1999,32,435. [2]E.C.Walter,K.Ng,M.P.Zach,R.M.Penner and F.Favier:Microelectron.Eng.,2002,61-62,555. [3]Q.F.Liu,C.X.Gao,J.J.Xiao and D.S.Xue:J.Magn. Magn.Mater.,2003,260,151. [4]D.H.Qin,Y.Peng,L.Cao and H.L.Li:Chem.Phys. Lett.,2003,374,661. [5]Y.A.Fedutik,G.P.Shevchenko,V.S.Kurilo and A.Y.Valendo:Surf.Sci.,2004,566-568,297. [6]F.Favier,E.C.Walter,M.P.Zach,T.Benter and R.M.Penner:Science,2001,293(5538),2227. [7]K.Scharnagl,M.Eriksson,A.Karthigeyan, M.Burgmair,M.Zimmer and I.Eisele:Sensor.Ac- tuat.B-Chem.,2001,78,138. [8]P.Janega and L.Young:J.Electrochem.Soc.,1986, 34(1),252. [9]Y.K.Xiao,B.C.Weng,G.Yu,J.Y.Wang,B.N.Hu and Z.Z.Chen:J.Appl.Electrochem.,2006,36,807. [10]Y.K.Xiao,G.Yu,J.Yuan,J.Y.Wang and Z.Z.Chen: Electrochim.Acta,2006,51,4218. [11]Baicheng WENG,Gang YU,Weiei SI,Juan YUAN and Jinyin WANG:Chin.J.Nonferrous Met.,2006, 16(6),1019.(in Chinese) [12]Y.W.Wang,G.W.Meng,C.H.Liang,G.Z.Wang and L.D.Zhang:Chem.Phys.Lett.,2001,339,174. [13]H.Zhu,S.G.Yang,G.Ni,D.L.Yu and Y.W.Du:J. Magn.Magn.Mater.,2001,234,454. [14]H.Li,C.L.Xu,G.Y.Zhao,Y.K.Su,T.Xu and H.L.Li: Solid State Commun.,2004,132,399. [15]H.F.Yao,J.L.Sun,W.Liu,H.S.Sun:J.Mater.Sci. Technol.,2007,23(1),39. [16]R.L.Zong,J.Zhou,Q.Li,B.Du,B.Li,M.Fu,X.W.Qi and L.T.Li:J.Phys.Chem.B,2004,108,16713. [17]K.Nielsch,R.B.Wehrspohn,J.Barthel,J.Kirschner, U.Gosele,S.F.Fischer and H.Kronmuller:Appl.Phys. Lett.,2001,79(9),1360. [18]Y.Peng,H.L.Zhang,S.L.Pan and H.L.Li:J.Appl. Phys.,2000,87(10),7405. [19]P.S.Fodor,G.M.Tsoi and L.E.Wenger:J.Appl.Phys., 2002,91(10),8186. [20]Y.G.Guo,L.J.Wan,C.F.Zhu,D.L.Yang,D.M.Chen and C.L.Bai:Chem.Mater.,2003,15,664. [21]D.S.Xu,Y.J.Xu,D.P.Chen,G.L.Guo,L.L.Gui and Y.Q.Tang:Chem.Phys.Lett.,2000,325,340. [22]D.S.Xu,X.S.Shi,G.L.Guo,L.L.Gui and Y.Q.Tang:J. Phys.Chem.B,2000,104,5061. [23]A.L.Prieto,M.S.Sander,M.S.Martin-Gonzalez, R.Gronsky,T.Sands and A.M.Stacy:J.Am.Chem. Soc.,2001,123,7160. [24]J.M.Garcia,A.Asenjo,J.Velazquez,D.Garcia and M.Vazquez:J.Appl.Phys.,1999,85(8),5480. [25]A.K.M.Bantu and J.Rivas:J.Appl.Phys.,2001, 89(6),3393. [26]C.Yoon and J.S.Suh:Bull.Korean Chem.Soc.,2002, 23(11),1519. [27]D.Y.Wan,Y.T.Wang,Z.P.Zhou,G.Q.Yang, B.Y.Wang and L.Wei:Mater.Sci.Eng.B,2005, 122,156. [28]G.Sauer,G.Brehm,S.Schneider,K.Nielsch, R.B.Wehrspohn,J.Choi,H.Hofmeister and U.Gosele: J.Appl.Phys.,2002,91(5),3243. [29]G.Yi and W.Schwarzacher:Appl.Phys.Lett.,1999, 74(12),1746. [30]D.J.Pena,J.K.N.Mbindyo,A.J.Carado,T.E.Mallouk, C.D.Keating,B.Razavi and T.S.Mayer:J.Phys. Chem.B,2002,106,7458. [31]S.Garcia,D.Salinas,C.Mayer,E.Schmidt,G.Staikov and W.J.Lorenz:Electrochim.Acta,1998,43,3007. [32]C.M.Whelan,M.R.Smyth,C.J.Barnes,G.A.Attard and X.F.Yang:J.Electroanal.Chem.,1999,474,138. [33]V.Rooryck,F.Reniers,C.Buess-Herman,G.A.Attard and X.Yang:J.Electroanal.Chem.,2000,482,93. [34]T.Kondo,J.Morita,M.Okamura,Saito.T and K.Uosaki:J.Electroanal.Chem.,2002,532,201. [35]Jinlou GU,Jianlin SHI and Liangming XIONG:Chem. J.Chin.Univ.,2004,(11),1986.(in Chinese) [36]S.M.Zhang,C.L.Zhang,J.W.Zhang,Z.J.Zhang, H.X.Dang,Z.S.Wu and W.M.Liu:Acts Phys-Chim. Sin.,2004,20(5),554.k |