Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

J Mater Sci Technol ›› 2006, Vol. 22 ›› Issue (03): 342-344.

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Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

Xiuhua CHEN, Xinghui WU, Jinzhong XIANG, Zhenlai ZHOU, Heyun ZHAO, Liqiang CHEN

Department of Materials Science and Engineering, Yunnan University, Kunming 650091, China

Received:2005-01-11 Revised:2005-08-12 Online:2006-05-28 Published:2009-10-10
Contact: Xiuhua CHEN

Abstract

Abstract: Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations (ULSIs) was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy (XPS) depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.

Key words: Cu diffusion, Sputtering method, Co/Cu/TiN film, Metallization

Xiuhua CHEN, Xinghui WU, Jinzhong XIANG, Zhenlai ZHOU, Heyun ZHAO, Liqiang CHEN. Cu Diffusion in Co/Cu/TiN Films for Cu Metallization[J]. J Mater Sci Technol, 2006, 22(03): 342-344.

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Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

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