X-ray Photoelectron Spectroscopy Studies of TixAl1-xN Thin Films Prepared by RF Reactive Magnetron Sputtering

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J Mater Sci Technol ›› 2005, Vol. 21 ›› Issue (04): 541-544.

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X-ray Photoelectron Spectroscopy Studies of TixAl1-xN Thin Films Prepared by RF Reactive Magnetron Sputtering

Rui XIONG, Jing SHI

Department of Physics, Wuhan University, Wuhan 430072, China ...

Received:2004-08-23 Revised:2004-11-15 Online:2005-07-28 Published:2009-10-10
Contact: Rui XIONG

Abstract

Abstract: TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the N1s core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p3/2 line between TiN and TixAl1-xN thin film was 0.7 eV.

Key words: TixAl1-xN films, X-ray photoelectron spectroscopy, Core-electron spectrum

Rui XIONG, Jing SHI. X-ray Photoelectron Spectroscopy Studies of TixAl1-xN Thin Films Prepared by RF Reactive Magnetron Sputtering[J]. J Mater Sci Technol, 2005, 21(04): 541-544.

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X-ray Photoelectron Spectroscopy Studies of TixAl1-xN Thin Films Prepared by RF Reactive Magnetron Sputtering

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