J Mater Sci Technol ›› 2004, Vol. 20 ›› Issue (05): 631-633.

• Research Articles • Previous Articles     Next Articles

ZnSe/GaAs/Ge Triple Junction Solar Cell and Its Structure Design

Aikun WANG, Guochang LI, Guoxiang ZHOU, Jertrude F.Neumark   

  1. School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
  • Received:1900-01-01 Revised:1900-01-01 Online:2004-09-28 Published:2009-10-10
  • Contact: Aikun WANG

Abstract: A new method is given to increase doping concentration of p-type ZnSe up to 1×1018 cm-3 through adding a little Te. This method gets over the difficulty of the high doping concentration of p-type ZnSe for many years. The external quantum efficiency (QE) of ZnSe p-n junction solar cell has been measured, and ZnSe is a good material of the top cell in the tandem solar cells. The solar cells made from ZnSe/GaAs/Ge can cover 94% of the total solar spectrum under AM (air mass) 1.5, and their theoretical efficiency is 56%.

Key words: ZnSe top cell, External quantum efficiency, Uneven doping semiconductor