J Mater Sci Technol ›› 2002, Vol. 18 ›› Issue (05): 436-438.

• Research Articles • Previous Articles     Next Articles

Dependence of Magnetoresistance on the Thickness of a Dusted Al Spacer Inserted in CoFe/Cu/CoFe Sandwiches

Yanxue CHEN, Shouguo WANG, Liangmo MEI, Kungwon Rhie, Sangjin Byeun   

  1. School of Physics and Microelectronics, Shandong University, Jinan 250100, China...
  • Received:2002-06-12 Revised:1900-01-01 Online:2002-09-28 Published:2009-10-10
  • Contact: Yanxue CHEN

Abstract: A series of CoFe (4 nm)/ Cu(X nm) Al (Y nm)/ CoFe(6 nm) samples have been prepared at room temperature. An exponential decay of the GMR (Giant Magnetoresistance) with Y was observed for fixed X=2nm. The characteristic decay parameter of Al is obtained to be about 0.26nm, which is rather close to 1 monolayer for Al. A coexistant state of GMR and AMR (anisotropic magnetoresistance) was observed when Y=2 nm. As the Cu spacer is replaced by Al layer, only AMR effect dominates. The experimental data further underline the important role played by the nonmagnetic spacers.

Key words: CoFe, Magnetoresistance, Anisotropy