Thermal Expansion Behavior of Precursor-Derived Amorphous Si-C-N and Si-B-C-N Ceramics

Abstract

Abstract: Thermal expansion behaviors of some precursor-derived amorphous Si-C-N and Si-B-C-N ceramics, which were shaped by plastic forming after crosslink, were studied. To complete the shrinkage and densification, after thermolysis specimens were heat treated at a temperature of 1400°C for 10h in nitrogen atmosphere. The thermal expansion coefficient of VT50-derived amorphous Si-C-N ceramic increases from 1.98´10-6/K at 400°C to 3.09´10-6/K at 1000°C, of NCP200-derived amorphous Si-C-N ceramic increases from 2.35´10-6/K at 400°C to 3.45´10-6/K at 1000°C, and of T2-1-derived amorphous Si-B-C-N ceramic increases from 2.08´10-6/K at 400°C to 3.18´10-6/K at 1000°C. No glass transition for these amorphous ceramic materials was detected, indicating that as-thermolyzedd precursor-derived Si-(B-)C-N ceramic materials are amorphous solids, but not glasses.

Key words: Thermal expansion, Amorphous

Jianqiang Peng, Hans Jürgen Seifert, Fritz Aldinger. Thermal Expansion Behavior of Precursor-Derived Amorphous Si-C-N and Si-B-C-N Ceramics[J]. J Mater Sci Technol, 2002, 18(02): 139-142.

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