Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition

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J Mater Sci Technol ›› 2001, Vol. 17 ›› Issue (01): 29-30.

• Research Articles • Previous Articles Next Articles

Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition

L.P. Wang, B. Y Tang, X.B. Tian, YX.Leng, Q. YZhang, P.K.Chu

Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China

Received:2000-04-25 Revised:1900-01-01 Online:2001-01-28 Published:2009-10-10
Contact: P.K.Chu

Abstract

Abstract: Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films'on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample

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L.P. Wang, B. Y Tang, X.B. Tian, YX.Leng, Q. YZhang, P.K.Chu. Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition[J]. J Mater Sci Technol, 2001, 17(01): 29-30.

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Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition

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