J. Mater. Sci. Technol. ›› 2022, Vol. 123: 159-167.DOI: 10.1016/j.jmst.2021.11.082

• Research Article • Previous Articles     Next Articles

An oxide-based heterojunction optoelectronic synaptic device with wideband and rapid response performance

Chunmei Lia, Jinyong Wanga, Dongyang Lic, Nasir Ilyasa, Zhiqiang Yanga, Kexin Chena, Peng Gua, Xiangdong Jianga, Deen Gua, Fucai Liua,*(), Yadong Jianga,b, Wei Lia,b,*()   

  1. aSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
    bState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
    cKey Laboratory of Information Materials of Sichuan Province and School of Preparatory Education, Southwest Minzu University, Chengdu 610041, China
  • Received:2021-07-26 Revised:2021-10-14 Accepted:2021-11-17 Published:2022-10-01 Online:2022-09-30
  • Contact: Fucai Liu,Wei Li
  • About author:wli@uestc.edu.cn (W. Li).
    *School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China, Chengdu, Sichuan 611731,China.E-mail addresses: fucailiu@uestc.edu.cn (F. Liu),

Abstract:

With the rapid development of science and technology, the emergence of new application scenarios, such as robots, driverless vehicles and smart city, puts forward high requirements for artificial visual systems. Optoelectronic synaptic devices have attracted much attention due to their advantages in sensing, memory and computing integration. In this work, via band structure engineering and heterostructure designing, a heterojunction optoelectronic synaptic device based on Cu doped with n-type SrTiO3(Cu:STO) film combined with p-type CuAlO2(CAO) thin film was fabricated. It is found surprisingly that the optoelectronic device based on Cu:STO/CAO p-n heterojunction exhibits a rapid response of 2 ms, and that it has a wideband response from visible to near-infrared (NIR) region. Additionally, a series of important synaptic functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP) to long-term potentiation (LTP) transition, learning experience behavior and image sharpening, have been successfully simulated on the device. More importantly, the performance of the device remains still stable and reliable after several months which were stored at room temperature and atmospheric pressure. Based on these advantages, the optoelectronic synaptic devices demonstrated here provide great potential in the new generation of artificial visual systems.

Key words: Cu:STO/CAO heterojunction, Optoelectronic synaptic devices, Vis to NIR wideband, Rapid response, Artificial visual system