J. Mater. Sci. Technol. ›› 2022, Vol. 108: 110-124.DOI: 10.1016/j.jmst.2021.08.042
• Research Article • Previous Articles Next Articles
Haohan Wang, Jinghuang Lin, Junlei Qi, Jian Cao()
Received:
2021-06-02
Revised:
2021-07-29
Accepted:
2021-08-05
Published:
2021-10-07
Online:
2021-10-07
Contact:
Jian Cao
About author:
* E-mail address: cao_jian@hit.edu.cn (J. Cao).1 These authors equally contributes in this work
Haohan Wang, Jinghuang Lin, Junlei Qi, Jian Cao. Joining SiO2 based ceramics: recent progress and perspectives[J]. J. Mater. Sci. Technol., 2022, 108: 110-124.
Fig. 1. (a) Theoretical mechanism of USP laser welding [25]; (b) gap influence on USP laser welding; (c) schematic illustration of USP welding area; (d) relationship between pulse energy and gap that can be bridged [26]; (e) typical interfacial microstructure of laser welding [27].
Base material 1 | Base material 2 | Temperature(°C) | Voltage(V) | Reference |
---|---|---|---|---|
Silica-based glass | Silicon | 350-400 | 600-1000 | [45,47] |
Empty Cell | Cu | 400 | 1000,1400 | [50,51] |
Empty Cell | TC4 | 250,300 | 400-600 | [52] |
Empty Cell | 430 stainless steel | 350,400 | 800,1000 | [53,54] |
Table 1. Anodic bonding parameters of different materials.
Base material 1 | Base material 2 | Temperature(°C) | Voltage(V) | Reference |
---|---|---|---|---|
Silica-based glass | Silicon | 350-400 | 600-1000 | [45,47] |
Empty Cell | Cu | 400 | 1000,1400 | [50,51] |
Empty Cell | TC4 | 250,300 | 400-600 | [52] |
Empty Cell | 430 stainless steel | 350,400 | 800,1000 | [53,54] |
Fig. 2. (a) wafer-level application of anodic bonding in MEMS [45]; (b) scheme of anodic bonding [42]; (c) cross-section image of the anodic bonding joint [46]; (d) the digital image of back side of anodic bonding area [47].
Fig. 5. (a) schematic of light interference [69]; (b) defects testing result of light interference [27]; (c) 3D-reconstruction of defects by X-ray [70]; (d) schematic of ultrasonic evaluation [71].
Methods | Type of defects that can be detected | Advantage | Disadvantage |
---|---|---|---|
Light interference | All | Sensitive | Basic materials need to be transparent |
X-ray | Voids | Results are clear | Only viable for voids with enough sizes |
Ultrasonic | All | Suitable for all materials | Hard to process |
Table 2. Nondestructive evaluation technology of SiO2 joints.
Methods | Type of defects that can be detected | Advantage | Disadvantage |
---|---|---|---|
Light interference | All | Sensitive | Basic materials need to be transparent |
X-ray | Voids | Results are clear | Only viable for voids with enough sizes |
Ultrasonic | All | Suitable for all materials | Hard to process |
Fig. 6. (a, b) schematic illustration of contact angle; (c) AgCu contact angle, (d) AgCuTi angle [72]; (e) contact angle changing plot with different contents of Ti [73]; (f) TEM image of reaction layer, (g-h) corresponding diffraction pattern of (f) [78].
Approach | Coating layer | Thickness | Final contact angle | Defects |
---|---|---|---|---|
Anneal | Amorphous carbon (Or Graphene) | Thick | 43o (42.8o) | Influence on interfacial reactions |
Plasma treatment | Carbon particles | Thin Discontinuous | 27o | Uneven thickness |
PECVD | VA-CNT | Thin | 30.6o | Complex processing Low efficiency |
Table 3. surface modification of SiO2f/SiO2 (AgCuTi brazing filling material).
Approach | Coating layer | Thickness | Final contact angle | Defects |
---|---|---|---|---|
Anneal | Amorphous carbon (Or Graphene) | Thick | 43o (42.8o) | Influence on interfacial reactions |
Plasma treatment | Carbon particles | Thin Discontinuous | 27o | Uneven thickness |
PECVD | VA-CNT | Thin | 30.6o | Complex processing Low efficiency |
Category | Typical materials | Character |
---|---|---|
I | Nb, 30Cr3 | Hardly involved in interfacial reaction |
II | Titanium alloy | Offering excessive active metals (Ti) |
III | Invar | Intensive inclination to react with active metals |
Table 4. Category of interfacial structure according to base materials.
Category | Typical materials | Character |
---|---|---|
I | Nb, 30Cr3 | Hardly involved in interfacial reaction |
II | Titanium alloy | Offering excessive active metals (Ti) |
III | Invar | Intensive inclination to react with active metals |
Fig. 8. typical interfacial microstructures of SiO2 and TC4 brazing seam. (a) AgCuTi brazing filling materials [87]; (b) TEM image of joints with rGO [89]; (c) AgCu/Ni brazing filling materials [90].
Fig. 9. (a) brittle phases in invar brazing seam [19]; (b) whole interfacial microstructure of invar brazing seam [91]; (c) graphene improved interface [84].
Fig. 10. (a) interfacial microstructure of Cu foil inserted brazing seam [92]; (b) framework of foam metal [94]; (c) interfacial microstructure of Cu foam inserted brazing seam [89] (d) Load-Displacement curves of different phases [72].
Base materials | Additional deformation material | Increasement of shear strength |
---|---|---|
SiO2-BN and Invar | Cu foil | 207% (compared with pristine AgCuTi) |
SiO2f/SiO2 and TC4 | Cu foam | 200% (compared with pristine Cu foil) |
SiO2-BN and TC4 | CNT reinforced Ni foam | 145% (compared with pure Ni foam) |
Table 5. Lists of residual stress control through deformation.
Base materials | Additional deformation material | Increasement of shear strength |
---|---|---|
SiO2-BN and Invar | Cu foil | 207% (compared with pristine AgCuTi) |
SiO2f/SiO2 and TC4 | Cu foam | 200% (compared with pristine Cu foil) |
SiO2-BN and TC4 | CNT reinforced Ni foam | 145% (compared with pure Ni foam) |
Fig. 11. Adjustment of CTE. (a) (b) CNT addition [85] (c) in-situ formation of TiB (d) schematic mechanism of TiB formation [95] (e) W interlayer microstructure after baring [72].
Brazing filling materials | Base materials | Improvements | Joint shear strength/ MPa | Joint size/ mm2 | Refs. |
---|---|---|---|---|---|
AgCuTi alloy | SiO2f/SiO2 / SiO2f/SiO2 | Carbothermal reduction reaction | 19 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / SiO2f/SiO2 | VA-CNT | 17 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / Al2O3 | - | 38.6 | 4 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / Nb | Surface etching | 52.9 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / Nb | Plasma treatment | 60.5 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / invar | - | 26 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / invar | Graphene modified | 26 | 5 × 5 | [ |
AgCuTi alloy | SiO2-BN / invar | - | 32 | 3 × 3 | [ |
AgCuTi alloy | Macor (46% SiO2) / Ti | - | 68 | φ13 | [ |
AgCuTi alloy | SiO2 / TC4 | - | 27 | 5 × 5 | [ |
AgCuTi alloy | SiO2 / Cu | - | 22 | 5 × 5 | [ |
AgCuTi alloy | SiO2 / 30Cr3 steel | - | 37 | 5 × 5 | [ |
AgCu-4.5 wt.%Ti/W/AgCu-1 wt.%Ti | SiO2f/SiO2 / invar | W interlayer | 33 | 5 × 5 | [ |
Ag-27.5Cu-2.5Ti powder with (h-BN) | SiO2-BN / Ti | BN particles | 31.4 | 3 × 3 | [ |
AgCuInTi alloy | SiO2f/SiO2 / Nb | - | 30.9 | φ5 | [ |
AgCuInTi alloy | SiO2f/SiO2 / TC4 | - | 19.6 | - | [ |
AgCu alloy | SiO2-BN / SiO2-BN | electron-beam evaporated Ti | 39.2 | 4 × 4 | [ |
AgCu alloy | SiO2f/SiO2 / invar | Metallized by Ni | 29 | Less than 10 × 10 | [ |
AgCu/Ni | SiO2(74%) / TC4 | - | 110 | - | [ |
AgCu/Cu/AgCuTi | SiO2-BN / invar | Cu interlayer | 43 | 5 × 5 | [ |
AgCuNi + nano Al2O3 powder | SiO2(76%) / TC4 | - | 40 | 5 × 5 | [ |
Cu-23Ti powder | SiO2f/SiO2 / invar | graphene-modified | 15 | 4 × 4 | [ |
TiNi | SiO2-BN / Nb | CNT reinforced | 84 | - | [ |
TiZrNiCu | SiO2 / TC4 | - | 23 | 5 × 5 | [ |
TiZrNiCu | SiO2-BN / TC4 | In-situ synthesized CNTs | 35.3 | 5 × 5 | [ |
TiZrNiCu | SiO2-BN / TC4 | Surface etching | 29.7 | 5 × 5 | [ |
TiZrNiCu/Ni foam | SiO2-BN / TC4 | CNTs-reinforced (Ni foam) | 50 | 5 × 5 | [ |
Sn3.5Ag4Ti(Ce,Ga) alloy | SiO2f/SiO2 / SiO2f/SiO2 | - | 17.91 | 5 × 5 | [ |
Table 6. Shear strength of SiO2 brazing joints.
Brazing filling materials | Base materials | Improvements | Joint shear strength/ MPa | Joint size/ mm2 | Refs. |
---|---|---|---|---|---|
AgCuTi alloy | SiO2f/SiO2 / SiO2f/SiO2 | Carbothermal reduction reaction | 19 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / SiO2f/SiO2 | VA-CNT | 17 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / Al2O3 | - | 38.6 | 4 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / Nb | Surface etching | 52.9 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / Nb | Plasma treatment | 60.5 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / invar | - | 26 | 5 × 5 | [ |
AgCuTi alloy | SiO2f/SiO2 / invar | Graphene modified | 26 | 5 × 5 | [ |
AgCuTi alloy | SiO2-BN / invar | - | 32 | 3 × 3 | [ |
AgCuTi alloy | Macor (46% SiO2) / Ti | - | 68 | φ13 | [ |
AgCuTi alloy | SiO2 / TC4 | - | 27 | 5 × 5 | [ |
AgCuTi alloy | SiO2 / Cu | - | 22 | 5 × 5 | [ |
AgCuTi alloy | SiO2 / 30Cr3 steel | - | 37 | 5 × 5 | [ |
AgCu-4.5 wt.%Ti/W/AgCu-1 wt.%Ti | SiO2f/SiO2 / invar | W interlayer | 33 | 5 × 5 | [ |
Ag-27.5Cu-2.5Ti powder with (h-BN) | SiO2-BN / Ti | BN particles | 31.4 | 3 × 3 | [ |
AgCuInTi alloy | SiO2f/SiO2 / Nb | - | 30.9 | φ5 | [ |
AgCuInTi alloy | SiO2f/SiO2 / TC4 | - | 19.6 | - | [ |
AgCu alloy | SiO2-BN / SiO2-BN | electron-beam evaporated Ti | 39.2 | 4 × 4 | [ |
AgCu alloy | SiO2f/SiO2 / invar | Metallized by Ni | 29 | Less than 10 × 10 | [ |
AgCu/Ni | SiO2(74%) / TC4 | - | 110 | - | [ |
AgCu/Cu/AgCuTi | SiO2-BN / invar | Cu interlayer | 43 | 5 × 5 | [ |
AgCuNi + nano Al2O3 powder | SiO2(76%) / TC4 | - | 40 | 5 × 5 | [ |
Cu-23Ti powder | SiO2f/SiO2 / invar | graphene-modified | 15 | 4 × 4 | [ |
TiNi | SiO2-BN / Nb | CNT reinforced | 84 | - | [ |
TiZrNiCu | SiO2 / TC4 | - | 23 | 5 × 5 | [ |
TiZrNiCu | SiO2-BN / TC4 | In-situ synthesized CNTs | 35.3 | 5 × 5 | [ |
TiZrNiCu | SiO2-BN / TC4 | Surface etching | 29.7 | 5 × 5 | [ |
TiZrNiCu/Ni foam | SiO2-BN / TC4 | CNTs-reinforced (Ni foam) | 50 | 5 × 5 | [ |
Sn3.5Ag4Ti(Ce,Ga) alloy | SiO2f/SiO2 / SiO2f/SiO2 | - | 17.91 | 5 × 5 | [ |
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