Fabrication of Si3N4/Cu direct-bonded heterogeneous interface assisted by laser irradiation

doi:10.1016/j.jmst.2021.05.032

Abstract

Abstract:

Joining of ceramic and metal is a key component in microelectronic device manufacturing, in which the integrity of bonded interface is critical in the performance and stability of the devices. Current methods with a problem of thick transition layer at the interface impeded heat flow, which degraded device service life seriously. Herein, we propose a laser-assisted bonding approach to join ceramic to metal directly without any intermediate material. By focusing the laser on the surface of β-Si₃N₄ ceramic, the Si microcrystalline layer with stacked α-Si₃N₄ nanocrystals was prepared first. The face-centered cubic (fcc) Si and hexagonal close-packed (hcp) β-Si₃N₄ substrate take the coherent orientation relations of [001]_fcc║[0001]_hcp and (220)_fcc║($10\bar{1}0$)_hcp. Then, the defect-free Si₃N₄/Cu bonded interface obtained by the reaction of the formed Si and Cu at elevated temperature in the 805 - 900°C range for 30 min demonstrated a strong and stable joining of ceramic to metal. The introduction of the laser provides a novel approach to join ceramics to metals, and the ceramic/metal component is expected to be a new configuration for package substrate in high-power device applications.

Key words: Laser-assisted direct bonding, Silicon nitride, Laser irradiation, Thermal decomposition, Ceramic/metal heterointerfaces

Yanyu Song, Duo Liu, Guobiao Jin, Haitao Zhu, Naibin Chen, Shengpeng Hu, Xiaoguo Song, Jian Cao. Fabrication of Si₃N₄/Cu direct-bonded heterogeneous interface assisted by laser irradiation[J]. J. Mater. Sci. Technol., 2022, 99: 169-177.

Figures/Tables 11

Fig. 1. Schematic diagram of Si3N4 irradiated by laser and its bonding with Cu.

Fig. 2. SEM images of (a) original and (b) laser-irradiated Si3N4 substrates, (c) Si 2p XPS spectra of Si3N4 surfaces before and after laser irradiation.

Fig. 3. XRD patterns of original and laser-irradiated Si3N4 substrates.

Fig. 4. STEM-EDX investigation for the modified layer on the laser-irradiated Si3N4 surface. (a) HADDF image, and the corresponding elemental distribution: (b) Si, N, O, (c) Si, (d) N, and (f) O.

Fig. 5. (a) Cross-sectional BF-STEM image of the laser-irradiated Si3N4 sample micrograph, (b) Magnified view of the marked square region 1 in part (a), (c) HRTEM image taken in the marked square region 1 in part (b), with the inset showing the corresponding FFT pattern, (d) IFFT image in part (c) along $\left( 1\bar{1}\bar{1} \right)$Si and $\left( \bar{1}11 \right)$Si planes, (e) SAED pattern taken in square region 2 in part (b) along [$01\bar{1}0$] Si3N4 zone axes,(f) HRTEM image taken in the marked square region 2 in part (b), with the inset showing the corresponding FFT pattern, (g) IFFT image in part (f) along $\left( 30\bar{3}1 \right)$Si3N4 and $\left( \bar{3}031 \right)$Si3N4 planes, (h) HRTEM image taken at the Si/Si3N4 interface of the square region 2 in part (a) along the [001>]Si ([0001]Si3N4) zone axes, with the inset showing the corresponding FFT patterns, (i) Magnified view of the marked square region in part (h), with the inset showing the corresponding FFT pattern, (j) IFFT image in part (i) along $\left( 2\bar{2}0 \right)$Si and $\left( \bar{2}20 \right)$Si planes.

Fig. 6. Cross-section SEM images of the original-Si3N4/Cu bonding interface obtained at (a) 805°C/30 min/2 MPa, (c) 850°C/30 min/2 MPa, (e) 900°C/30 min/5 MPa and laser-irradiated- Si3N4/Cu bonding interface obtained at (b) 805°C/30 min/2 MPa, (d) 850°C/30 min/2 MPa, (f) 900°C/30 min/5 MPa.

Fig. 7. TEM investigations for the laser-irradiated-Si3N4/Cu bonding interface. (a) HADDF-STEM image showing the laser-irradiated-Si3N4/Cu interface, and the corresponding elemental distribution: (b) N, (c) Si and (d) Cu, (e) Magnified view of the marked square region in part (a), with the inset showing the SAED pattern taken in the marked circular region in part (e), (f) HRTEM image taken in the marked circular region in part (e).

Fig. 8. (a) Shear strength of laser-induced Si3N4/Cu bonding structure with various bonding temperatures, (b) current-voltage characteristics of Si3N4, Cu and Si3N4/Cu samples, (c) thermal diffusivity and (d) thermal conductivity of Si3N4, Cu and Si3N4/Cu samples with various temperatures.

Fig. 9. IFFT image of {$30\bar{3}0$}chcp║{220}fcc interface taken by corrected HRTEM.

Fig. 10. Diagram calculated using ThermoCalc (database constructed by B. Hallstedt [47]).

Fig. 11. (a) Formation enthalpies and (b) Gibbs free energy of the IMCs in the Cu-Si system calculated using ThermoCalc (database constructed by B. Hallstedt [47]).

References 52

[1]	N. Joseph, J. Varghese, M. Teirikangas, T. Vahera, H. Jantunen, ACS Appl. Mater. Interfaces 11 (2019) 23798-23807. DOI URL
[2]	Y. Zhou, L. Xu, S. Liu, Microelectron. Eng. 136 (2015) 63-70. DOI URL
[3]	X. Zhang, M. Wang, X. Li, Z. Ding, C. Ma, Y. Lu, Y. Mei, IEEE Trans. Power Elec- tron. 35 (2019) 8532-8539.
[4]	Y. Wang, Y.H. Xu, Z.Y. Cao, C. Yan, K. Wang, J.J. Chen, S.Y. Cheng, Z. S. Feng, Composites Part B 157 (2019) 123-130.
[5]	W. Wang, D. Yao, H. Chen, Y. Xia, K. Zuo, J. Yin, H. Liang, Y.P. Zeng, J. Am. Ceram. Soc. 103 (2020) 2090-2100. DOI URL
[6]	R. Yin, F. Ji, Q. Hou, F. Liu, J. Li, L. Chen, J. Mater. Sci. Technol. 35 (2019) 285-289.
[7]	Y. Li, H.N. Kim, H. Wu, M.J. Kim, J.W. Ko, Y.J. Park, Z. Huang, H.D. Kim, J. Eur. Ceram. Soc. 39 (2018) 157-164. DOI URL
[8]	W.H. Tuan, S.K. Lee, J. Eur. Ceram. Soc 34 (2014) 4117-4130. DOI URL
[9]	H. Miyazakia, S. Iwakiri, K. Hirao, S. Fukuda, N. Izu, Y.I. Yoshizawa, H. Hyuga, Ceram. Int. 43 (2017) 5080-5088. DOI URL
[10]	J. Schulz-Harder, Microelectron. Reliab. 43 (2003) 359-365. DOI URL
[11]	S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, J. Liang, Jap. J. of Appl. Phys. 59 (2020) SBBB03.
[12]	J. Liang, S. Yamajo, M. Kuball, N. Shigekawa, Scr. Mater. 159 (2019) 58-61. DOI URL
[13]	J.F. Dickson, Int. J. Hybrid Microelectron. 5 (1982) 103-109.
[14]	H. Ning, J. Ma, F. Huang, Y. Wang, Q. Li, X. Li, Appl. Surf. Sci. 211 (2003) 250-258. DOI URL
[15]	S.I. Tanaka, J. Mater. Sci. 45 (2009) 2181-2187. DOI URL
[16]	L. Xu, M. Wang, Y. Zhou, Z. Qian, S. Liu, Microelectron. Reliab. 56 (2016) 101-108. DOI URL
[17]	S. Zhang, L. Yan, K. Gao, H. Yang, L. Yang, Y. Wang, X. Wan, Ceram. Int. 45 (2019) 14669-14674. DOI URL
[18]	F. Lang, H. Yamaguchi, H. Nakagawa, H. Sato, J. Electron. Mater. 44 (2015) 4 82-4 89. DOI URL
[19]	A. Fukumoto, D. Berry, K.D.T. Ngo, G.Q. Lu, IEEE Trans. Device Mater. Raliab. 14 (2014) 751-756.
[20]	L. Dupont, Z. Khatir, S. Lefebvre, S. Bontemps, Microelectron. Reliab. 46 (2006) 1766-1771. DOI URL
[21]	H. Miyazaki, Y. Zhou, S. Iwakiri, H. Hirotsuru, K. Hirao, S. Fukuda, N. Izu, H. Hyuga, Ceram. Int. 44 (2008) 8870-8876. DOI URL
[22]	R. Takigawa, J. Utsumi, Scr. Mater. 174 (2020) 58-61. DOI URL
[23]	M.R.H. Knowles, G. Rutterford, D. Karnakis, A. Ferguson, Int. J. Adv. Manuf. Technol. 33 (2007) 95-102. DOI URL
[24]	L.C. Tshabalala, S. Pityana, Surf. Coat. Technol. 289 (2016) 52-60. DOI URL
[25]	P.E. Kozioł, A.J. Antończak, P. Szymczyk, B. Stępak, K.M. Abramski, Appl. Surf. Sci. 287 (2013) 165-171. DOI URL
[26]	Q. Yang, Y. Chen, Z. Lv, L. Chen, D. Lou, Z. Zheng, J. Cheng, D. Liu, J. Mater. Sci. 54 (2019) 13874-13882. DOI URL
[27]	L. Wang, Z. Fu, R. Suess-Wolf, N. Travitzky, P. Greil, J. Franke, Adv. Eng. Mater. 21 (2019) 190 0 096.
[28]	S. Wang, T. Ding, J. Mater. Chem. C 7 (2019) 13410-13414. DOI URL
[29]	H.C. Yoon, S. Lee, J.K. Song, H. Yang, Y.R. Do, ACS Appl. Mater. Interfaces 10 (2018) 11756-11767. DOI URL
[30]	W. Yue, Y. Liu, M. Zhao, F. Ye, L. Chen, J. Mater. Sci. Technol. 35 (2019) 2898-2905.
[31]	S. Liu, G. Zhao, Y. He, H. Wei, Y. Li, P. Qiu, Y. Song, Y. Am, X. Wang, X. Wang, J. Cheng, M. Peng, X. Zheng, ACS Appl. Mater. Interfaces 11 (2019) 35382-35388. DOI URL
[32]	X. Liu, X. Yin, W. Duan, F. Ye, X. Li, J. Mater. Sci. Technol. 35 (2019) 2832-2839. DOI URL
[33]	S.S. Wang, J.T. Jiang, G.H. Fan, A.M. Panindre, G.S. Frankel, L. Zhen, Acta Mater. 131 (2017) 233-245. DOI URL
[34]	G.W. Liu, W. Li, G.J. Qiao, H.J. Wang, J.F. Yang, T.J. Lu, J. Alloys Compd. 470 (2009) 163-167. DOI URL
[35]	J. Li, W. Fuliang, L. Han, J. Zhong, J. Phys. D: Appl. Phys. 41 (2008) 135303. DOI URL
[36]	N. Mattern, R. Seyrich, L. Wilde, C. Baehtz, M. Knapp, J. Acker, J. Alloys Compd. 429 (2007) 211-215. DOI URL
[37]	J.K. Solberg, Acta. Cryst.(1978) 684-698 A34.
[38]	O.A Lukianova, A.A. Parkhomenko, V.V. Krasilnikov, A.N. Khmara, A.P. Kuz- menko, Ceram. Int. 45 (2019) 14338-14346. DOI
[39]	Z.H. Wei, L.J. Cheng, Y.X. Ma, A.N. Chen, X.F. Guo, J.M. Wu, Y.S. Shi, Scr. Mater. 173 (2019) 91-95. DOI URL
[40]	M. Vlasova, M.S. Alimbekov, P.E. Zhelezov, I.V. Mel’Nikov, V.N. Tokarev, P.A.M. Aguilar, M. Kakazey, M.C. Reséndiz-González, R.G. Tapia, Ceram. Int. 46 (2019) 3668-3674. DOI URL
[41]	H.C. Wu, A. Kumar, J. Wang, X.F. Bi, C.N. Tomé, Z. Zhang, S.X. Mao, Sci. Rep. 6 (2016) 24370. DOI PMID
[42]	H. Zhao, X. Hu, M. Song, S. Ni, Scr. Mater. 132 (2017) 63-67. DOI URL
[43]	C. Bagci, Q. Yang, W.M. Kriven, J. Am. Ceram. Soc. 102 (2019) 6542-6551. DOI URL
[44]	F. Wang, X. Qin, G. Jin, X. Guo, Phys. E 42 (2010) 2033-2035. DOI URL
[45]	C.H. Vu, D.W. Seo, H.J. Kim, J.K. Lim, Key Eng. Mater. 306-308 (2006) 423-428. DOI URL
[46]	Y. Jiang, M. Chen, L. Feng, J. Chen, B. Zhao, Ceram. Int. 44 (2017) 718-722. DOI URL
[47]	B. Hallstedt, J. Gröbner, M. Hampl, R. Schmid-Fetzer, Calphad 53 (2016) 25-38. DOI URL
[48]	R.W. Olesinski, Bull. Alloy Phase Diagrams 7 (1986) 170-178. DOI URL
[49]	L. Soldi, A. Laplace, M. Roskosz, S. Gossé, J. Alloys Compd. 803 (2019) 61-70. DOI URL
[50]	X. Yan, Y.A. Chang, J. Alloys Compd. 308 (2000) 221-229. DOI URL
[51]	E.R. Weber, Appl. Phys. A 30 (1983) 1-22. DOI URL
[52]	D. Shin, J.E. Saal, Z.K. Liu, Calphad 32 (2008) 520-526. DOI URL

Fabrication of Si₃N₄/Cu direct-bonded heterogeneous interface assisted by laser irradiation

RichHTML

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

Figures/Tables 11

References 52

Related Articles 15

Recommended Articles

Metrics

Comments

[1]	Wei Zhou, Lan Long, Yang Li. Mechanical and electromagnetic wave absorption properties of C_f-Si₃N₄ ceramics with PyC/SiC interphases [J]. J. Mater. Sci. Technol., 2019, 35(12): 2809-2813.
[2]	Shengqing Liu, Jiaming Mei, Chen Zhang, Jianchao Zhang, Rongrong Shi. Synthesis and magnetic properties of shuriken-like nickel nanoparticles [J]. J. Mater. Sci. Technol., 2018, 34(5): 836-841.
[3]	Donghui Yang, Jianqing Chen, Hui Wang, Jinghua Jiang, Aibin Ma, Z.P. Lu. Effect of Decomposition Kinetics of Titanium Hydride on the Al Alloy Melt Foaming Process [J]. J. Mater. Sci. Technol., 2015, 31(4): 361-368.
[4]	Xuefeng Lu, Yin Wei, Hongjie Wang, Jiangbo Wen, Jun Zhou, Jinpeng Fan. Porosity and Oxide Layer Dependence of Thermal Shock Behavior of Porous Silicon Nitride Ceramics [J]. J. Mater. Sci. Technol., 2014, 30(12): 1217-1222.
[5]	Asieh Sadat Kazemi, Reza Afzalzadeh, Mohamadreza Abadyan. ZnO Nanoparticles as Ethanol Gas Sensors and the Effective Parameters on Their Performance [J]. J. Mater. Sci. Technol., 2013, 29(5): 393-400.
[6]	Quan Li, Xiaowei Yin. Effects of Phase Composition on Microstructure and Mechanical Properties of Lu₂O₃-doped Porous Silicon Nitride Ceramics [J]. J Mater Sci Technol, 2011, 27(6): 529-533.
[7]	Pengfei Zhang Litong Zhang Xiaowei Yin. Fabrication of Porous Si₃N₄-Lu₂Si₂O₇ Composite Ceramics [J]. J Mater Sci Technol, 2010, 26(5): 449-453.
[8]	Jie XU, Dongmei ZHU, Fa LUO, Wancheng ZHOU, Peng LI. Dielectric Properties of Porous Reaction-boned Si3N4 Ceramics with Controlled Porosity and Pore Size [J]. J Mater Sci Technol, 2008, 24(02): 207-210.
[9]	Ruihua HU, Montasser M.Dewidar, Hyo-Jin KIM, Jae-Kyoo LIM. Effect of Si3N4 Addition on the Mechanical Properties, Microstruc-tures, and Wear Resistance of Ti-6Al-4V Alloy [J]. J Mater Sci Technol, 2007, 23(02): 257-261.
[10]	Yanqing LIU, Changsheng LI, Jinghai YANG, Zhong HUA, Junmao LI, Kehong AN, Shuhuo Zhao. Two Alternative Routes to MS2 Nanotubes [J]. J Mater Sci Technol, 2007, 23(02): 185-188.
[11]	H.Huang, X.Z.Hu, Y.Liu, M.Bush, K.Winchester, C.Musca, J.Dell, L.Faraone. Characterization of Mechanical Properties of Silicon Nitride Thin Films for MEMS Devices by Nanoindentation [J]. J Mater Sci Technol, 2005, 21(Supl.1): 13-16.
[12]	Wen ZHANG, Hongjie WANG, Zhihao JIN. Preparation and Properties of Macroporous Silicon Nitride Ceramics by Gelcasting and Carbonthermal Reaction [J]. J Mater Sci Technol, 2005, 21(06): 894-898.
[13]	Weiping SHEN, Fei WANG, Zhuohui WU, Changchun GE. Effect of Auxiliary Gases on Combustion Synthesis of Si3N4 [J]. J Mater Sci Technol, 2005, 21(05): 701-704.
[14]	Yixian CHEN, Baolin HE, Hanfan LIU. Preparation and Characterization of Palladium Colloidal Nanoparticles by Thermal Decomposition of Palladium Acetate with Microwave Irradiation [J]. J Mater Sci Technol, 2005, 21(02): 187-190.
[15]	Xincheng MIAO, Chongmin ZHANG, Shuwen CHEN, Hao YUAN. Determination of Thermal Decomposition Kinetics Parameters of Waste Plastics by Means of Thermogravimetry [J]. J Mater Sci Technol, 2004, 20(Supl.): 133-134.