Interface dominated deformation transition from inhomogeneous to apparent homogeneous mode in amorphous/amorphous nanolaminates

doi:10.1016/j.jmst.2021.04.073

Abstract

Abstract:

The amorphous/amorphous nanolaminates (A/ANLs) have aroused great attentions owing to their tunable structure and enhanced mechanical properties. However, the plastic deformation mechanism of A/ANLs have yet been clarified. Here, we systematically examined the mechanical properties and deformation behavior of series of NiNb/ZrCuNiAl A/ANLs via nanoindentaion test. It was found that both the amount and morphology of amorphous/amorphous interface (A/AIs) played crucial roles in the plastic deformation of A/ANLs. Less and straighter A/AIs facilitated multiple shear banding deformation, of which the hardness increased with decreasing layer thickness, as the A/AIs hindered the propagation of shear bands (SBs). Whilst, more and wavier A/AIs promoted homogeneous deformation, of which the hardness stayed at a much lower value and was relatively irrelevant with the layer thickness, for the promoted activation of shear transformation zones by A/AIs. Our results provide guidance for modifying the mechanical properties of amorphous alloys with interface engineering design.

Key words: Amorphous alloys, Nanolaminates, Shear bands, Hardness, Interface

Z.Q. Chen, M.C. Li, J.S. Cao, F.C. Li, S.W. Guo, B.A. Sun, H.B. Ke, W.H. Wang. Interface dominated deformation transition from inhomogeneous to apparent homogeneous mode in amorphous/amorphous nanolaminates[J]. J. Mater. Sci. Technol., 2022, 99: 178-183.

Figures/Tables 8

Fig. 1. XRD patterns of the A/ANLs with layer thickness ranking from 2 to 100 nm, as well as the monolayered NiNb and ZrCuNiAl films.

Fig. 2. Representative bright-field cross-sectional TEM images for (a) A/ANLs-100, (b) A/ANLs-50, (c) A/ANLs-25, (d) A/ANLs-10, (e) A/ANLs-5 and (f) A/ANLs-2. Insets in (a-f) are the corresponding SAED patterns.

Fig. 3. Representative cross-sectional HRTEM images for (a) A/ANLs-100, (b) A/ANLs-50, (c) A/ANLs-25, (d) A/ANLs-10, (e) A/ANLs-5 and (f) A/ANLs-2.

Fig. 4. Representative bright field cross-sectional TEM images for the monolayered (a) NiNb and (b) ZrCuNiAl films, as well as the corresponding HRTEM in (c) and (d), respectively. Insets in (a) and (c) are the corresponding SAED patterns.

Fig. 5. Layer thickness dependent hardness and Young's modulus of A/ANLs. The dark (or blue) solid, dashed and short dashed (or dash dotted) lines indicate the hardness (or Young's modulus) of ZrCuNiAl, NiNb and A/ANLs estimated by ROM in isostrain (or in isostress) state, respectively. The red short dashed line indicates the critical layer thickness hc.

Fig. 6. SEM images of the residual impressions for (a) A/ANLs-100, (b) A/ANLs-50, (c) A/ANLs-25, (d) A/ANLs-10, (e) A/ANLs-5 and (f) A/ANLs-2. Apparent SBs are indicated by the white arrows in (a-c).

Fig. 7. Representative method for measuring Ri in A/ANLs-100 and (b) the Ri values of the A/ANLs plotted as functions of layer thickness.

Fig. 8. Schematic description of the deformation mechanism for the A/ANLs upon indentation testing. The black ovals and yellow solid circles represent STZs and stress concentrators respectively. The thick solid arrows indicate mature SBs penetrate A/AIs directly or deflect along A/AIs first and then penetrate A/AIs with the assistance of stress concentrators.

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