J. Mater. Sci. Technol. ›› 2021, Vol. 92: 171-177.DOI: 10.1016/j.jmst.2021.03.045
• Research Article • Previous Articles Next Articles
Kwonwoo Oha,1, Kyungeun Jungb,1, Jaehak Shinc, Sunglim Koc, Man-Jong Leea,b,*()
Received:
2021-01-28
Revised:
2021-03-12
Accepted:
2021-03-14
Published:
2021-11-30
Online:
2021-05-09
Contact:
Man-Jong Lee
About author:
* E-mail address: leemtx@konkuk.ac.kr (M.-J. Lee).1 These authors have contributed equally.
Kwonwoo Oh, Kyungeun Jung, Jaehak Shin, Sunglim Ko, Man-Jong Lee. Novel Intense-pulsed-light synthesis of amorphous SnO2 electron-selective layers for efficient planar MAPbI3 perovskite solar cells[J]. J. Mater. Sci. Technol., 2021, 92: 171-177.
Fig. 2. (a, b) Surface SEM images of MAPbI3 upper layers on I-SnO2 and A-SnO2 substrates; (c) the relationship between incident angle and XRD detection depth; (d-f) Halder-Wagner plots for different incident angles of MAPbI3 films on I-SnO2 and A-SnO2 substrates.
Samples/incident angle | Slope | Intercept | R-square | Correlation length (L) | Stress parameter (εs) |
---|---|---|---|---|---|
A-SnO2/1° incident | 0.2326 | 0.0148 | 0.9992 | 4.2992 | 0.2435 |
I-SnO2/1° incident | 0.2125 | 0.0112 | 0.9970 | 4.7059 | 0.2115 |
A-SnO2/2° incident | 0.2281 | 0.0126 | 0.9986 | 4.3840 | 0.2245 |
I-SnO2/2° incident | 0.2126 | 0.0098 | 0.9965 | 4.7037 | 0.1975 |
A-SnO2/3° incident | 0.2090 | 0.0276 | 0.9981 | 4.7847 | 0.3323 |
I-SnO2/3° incident | 0.2089 | 0.0174 | 0.9967 | 4.7870 | 0.2640 |
Table 1 Details of Halder-Wagner fitting data.
Samples/incident angle | Slope | Intercept | R-square | Correlation length (L) | Stress parameter (εs) |
---|---|---|---|---|---|
A-SnO2/1° incident | 0.2326 | 0.0148 | 0.9992 | 4.2992 | 0.2435 |
I-SnO2/1° incident | 0.2125 | 0.0112 | 0.9970 | 4.7059 | 0.2115 |
A-SnO2/2° incident | 0.2281 | 0.0126 | 0.9986 | 4.3840 | 0.2245 |
I-SnO2/2° incident | 0.2126 | 0.0098 | 0.9965 | 4.7037 | 0.1975 |
A-SnO2/3° incident | 0.2090 | 0.0276 | 0.9981 | 4.7847 | 0.3323 |
I-SnO2/3° incident | 0.2089 | 0.0174 | 0.9967 | 4.7870 | 0.2640 |
Fig. 3. (a, b) Cross-sectional SEM images showing the device architecture of solar cells based on I-SnO2 and A-SnO2; (c) the J-V characteristics of perovskite solar cells fabricated with I-SnO2 and A-SnO2; (d) IPCE of I-SnO2-and A-SnO2-based cells; (e) PCE stability of I-SnO2-and A-SnO2-based cells; and (f) J-V characteristics of perovskite solar cells fabricated with I-SnO2 and SnO2 sintered at 185 °C for 3 h.
Fig. 4. (a) Nyquist plot of full devices based on I-SnO2 and A-SnO2 using the equivalent circuit (inset); (b, c) variations in Rrec and Rtr of the full devices based on I-SnO2 and A-SnO2; (d) log plot of J-V of electron-only-devices (inset) based on I-SnO2 and A-SnO2 for calculation of the trap-filled limited voltage (VTFL) and trap density (Nt); (e, f) the conductive AFM images of A-SnO2 and I-SnO2, respectively.
Fig. 5. (a, b) UPS spectra representing the secondary electron cutoff energy (Ecutoff) and Fermi-edge energy (EF,edge); (c) Tauc plots of I-SnO2 and A-SnO2; (d) band diagram showing the complete band offsets of full devices based on I-SnO2 and A-SnO2.
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