Broadband photodetector of high quality Sb2S3 nanowire grown by chemical vapor deposition

doi:10.1016/j.jmst.2020.10.005

Abstract

Abstract:

Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and property. In this work, one-dimensional Sb₂S₃ nanowires (NWs) with high crystallinity were grown via chemical vapor deposition (CVD) technique on SiO₂/Si substrates. The Sb₂S₃ NWs exhibited needle-like structures with inclined cross-sections. The lengths of Sb₂S₃ nanowires changed from 7 to 13 μm. The photodetection properties of Sb₂S₃ nanowires were comprehensively and systematically characterized. The Sb₂S₃ photodetectors show a broadband photoresponse ranging from ultraviolet (360 nm) to near-infrared (785 nm). An excellent specific detectivity of 2.1 × 10¹⁴ Jones, high external quantum efficiency of 1.5 × 10 ⁴ %, sensitivity of 2.2 × 10 ⁴ cm²W^-1 and short response time of less than 100 ms was achieved for the Sb₂S₃ NW photodetectors. Moreover, the Sb₂S₃ NWs showed outstanding switch cycling stability that was beneficial to the practical applications. The high-quality Sb₂S₃ nanowires fabricated by CVD have great application potential in semiconductor and optoelectronic fields.

Key words: Sb₂S₃nanowires, Photodetector, Chemical Vapor Deposition

Kun Ye, Bochong Wang, Anmin Nie, Kun Zhai, Fusheng Wen, Congpu Mu, Zhisheng Zhao, Jianyong Xiang, Yongjun Tian, Zhongyuan Liu. Broadband photodetector of high quality Sb₂S₃ nanowire grown by chemical vapor deposition[J]. J. Mater. Sci. Technol., 2021, 75: 14-20.

Figures/Tables 4

Fig. 1. (a) Schematic diagram of the synthesis process of Sb2S3 NWs by CVD method. (b, c) The atomic structure of Sb2S3 NWs from top view and side view, respectively. (d) XRD spectra of Sb2S3 NWs. (e, f) XPS spectrum of the spin-orbit doublet of Sb 3d and S 2p of Sb2S3 NWs, respectively. (g) Raman spectra of Sb2S3 NWs. (h) PL spectra of Sb2S3 NWs. (i) AFM image of one Sb2S3 NW and its geometric dimensions.

Fig. 2. (a) TEM image of one Sb2S3 nanowire along the [001] direction under low magnification. The composition analysis by the EDX element mapping of (b) magnified Sb2S3 nanowire image, (c) S element, (d) Sb element and (e) mixed S and Sb elements. (f) SAED pattern of Sb2S3 NWs. (g) Atomic scale HAADF image of Sb2S3 NWs.

Fig. 3. Characterization of the Sb2S3 NWs based two-terminal devices. (a) Schematic illustration of the Sb2S3 NWs devices and the photoelectric performance measurement. (b) The I-V output curves under different power density of 532 nm polarized light. (c) The I-V output curves at different wavelengths of polarized light under 28 mW/cm2 power density. (d) Photocurrent Iph, (e) responsivity R, (f) detectivity D*, (g) external quantum efficiency EQE, (h) sensitivity S as function of power density under different wavelengths. The Sb2S3 NWs devices are measured under the Vds = 5 V. (i) The key parameters of R, D* as function of wavelengths with the power density of 0.03 mW/cm2.

Fig. 4. (a) Temporal photoresponse under different wavelength of light. (b) The comparison of temporal photoresponse by changing the wavelength from 360 nm to 785 nm. (c) Long-term photo switching curves under periodic on and off illumination under 532 nm wavelength.

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Broadband photodetector of high quality Sb₂S₃ nanowire grown by chemical vapor deposition

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