J. Mater. Sci. Technol. ›› 2021, Vol. 70: 49-58.DOI: 10.1016/j.jmst.2020.08.042
• Research Article • Previous Articles Next Articles
Bing Yanga,c, Gang Hea,b,*(), Wenhao Wanga, Yongchun Zhanga, Chong Zhanga, Yufeng Xiaa, Xiaofen Xua
Received:
2020-03-09
Revised:
2020-07-26
Accepted:
2020-07-30
Published:
2021-04-20
Online:
2021-04-30
Contact:
Gang He
About author:
*School of Physics and Materials Science, RadiationDetection Materials & Devices Lab, Anhui University, Hefei 230601, China. E-mail: hegang@ahu.edu.cn (G. He).Bing Yang, Gang He, Wenhao Wang, Yongchun Zhang, Chong Zhang, Yufeng Xia, Xiaofen Xu. Diffusion-activated high performance ZnSnO/Yb2O3 thin film transistors and application in low-voltage-operated logic circuits[J]. J. Mater. Sci. Technol., 2021, 70: 49-58.
Fig. 1. (a) Optical transmission spectra of Yb2O3 thin films annealed at different temperatures. The inset shows the Tauc plots of the corresponding Yb2O3 thin films. (b) TG result of Yb2O3 xerogel with a heating rate of 5 ℃ min-1. (c) XRD pattern of Yb2O3thin films as a function of annealing temperature.
Fig. 2. (a) O 1s XPS spectra for Yb2O3 thin films as a function of annealing temperature. (b) Semiquantitative analyses of the oxygen component for the corresponding Yb2O3 thin films. (c) Yb 4d XPS spectra for Yb2O3 thin films as a function of annealing temperature.
Fig. 4. (a) Frequency dependent areal capacitance of Yb2O3thin films annealed at different temperatures. The inset shows frequency dependent dielectric constant of Yb2O3 thin films annealed at different temperatures. (b) Leakage current density of Yb2O3 thin films annealed at various temperatures.
Sample | μsat (cm2 V-1 S-1) | Ion/Ioff | VTH(V) | SS (V dec-1) |
---|---|---|---|---|
420 °C-ZTO/Yb2O3 without aging | 0.018 | 5.8 × 104 | 0.9 | 0.21 |
460 °C -ZTO/Yb2O3 without aging | 0.556 | 1.4 × 105 | 1.25 | 0.11 |
500 °C -ZTO /Yb2O3 without aging | 9.1 | 2.15 × 107 | 1.7 | 0.12 |
420°C-ZTO/Yb2O3 aging for 10 days | 0.77 | 5.3 × 106 | 1.27 | 0.07 |
460°C-ZTO/Yb2O3 aging for 10 days | 5.9 | 8.7 × 106 | 1.0 | 0.064 |
500°C-ZTO/Yb2O3 aging for 10 days | 6.5 | 1.8 × 105 | 0.7 | 0.098 |
420°C-ZTO/Yb2O3 aging for 20 days | 0.68 | 8.17 × 10 | -0.25 | 0.91 |
460°C-ZTO/Yb2O3 aging for 20 days | 3.6 | 1.0 × 105 | 0.05 | 0.12 |
500°C-ZTO/Yb2O3 aging for 20 days | 3.97 | 6.8 × 104 | 0.08 | 0.12 |
500°C-ZTO/Yb2O3 aging for 30 days | 3.37 | 2.13 × 104 | 0.16 | 0.21 |
500°C-ZTO/Yb2O3 aging for 40 days | 1.17 | 5.7 × 103 | 0.41 | 0.27 |
500°C-ZTO/ZrO215 | 2.5 | 106 | 1.0 | 0.23 |
500°C-ZTO/DyOX16 | 2.5 | 2.4 × 106 | 0.5 | 0.08 |
500°C-ZTO /Gd2O317 | 1.9 | 6 × 103 | 0.82 | 0.76 |
600°C-In2O3 /SrOX19 | 5.61 | 107 | 1.23 | 0.11 |
510°C-ZTO/ZrGdOx20 | 3.1 | 3.3 × 105 | 0.5 | 0.091 |
500°C-In2O3 /Yb2O321 | 4.98 | 106 | 0.38 | 0.07 |
Table 1 Electrical parameters of ZTO TFTs at various annealing processing and aging conditions.
Sample | μsat (cm2 V-1 S-1) | Ion/Ioff | VTH(V) | SS (V dec-1) |
---|---|---|---|---|
420 °C-ZTO/Yb2O3 without aging | 0.018 | 5.8 × 104 | 0.9 | 0.21 |
460 °C -ZTO/Yb2O3 without aging | 0.556 | 1.4 × 105 | 1.25 | 0.11 |
500 °C -ZTO /Yb2O3 without aging | 9.1 | 2.15 × 107 | 1.7 | 0.12 |
420°C-ZTO/Yb2O3 aging for 10 days | 0.77 | 5.3 × 106 | 1.27 | 0.07 |
460°C-ZTO/Yb2O3 aging for 10 days | 5.9 | 8.7 × 106 | 1.0 | 0.064 |
500°C-ZTO/Yb2O3 aging for 10 days | 6.5 | 1.8 × 105 | 0.7 | 0.098 |
420°C-ZTO/Yb2O3 aging for 20 days | 0.68 | 8.17 × 10 | -0.25 | 0.91 |
460°C-ZTO/Yb2O3 aging for 20 days | 3.6 | 1.0 × 105 | 0.05 | 0.12 |
500°C-ZTO/Yb2O3 aging for 20 days | 3.97 | 6.8 × 104 | 0.08 | 0.12 |
500°C-ZTO/Yb2O3 aging for 30 days | 3.37 | 2.13 × 104 | 0.16 | 0.21 |
500°C-ZTO/Yb2O3 aging for 40 days | 1.17 | 5.7 × 103 | 0.41 | 0.27 |
500°C-ZTO/ZrO215 | 2.5 | 106 | 1.0 | 0.23 |
500°C-ZTO/DyOX16 | 2.5 | 2.4 × 106 | 0.5 | 0.08 |
500°C-ZTO /Gd2O317 | 1.9 | 6 × 103 | 0.82 | 0.76 |
600°C-In2O3 /SrOX19 | 5.61 | 107 | 1.23 | 0.11 |
510°C-ZTO/ZrGdOx20 | 3.1 | 3.3 × 105 | 0.5 | 0.091 |
500°C-In2O3 /Yb2O321 | 4.98 | 106 | 0.38 | 0.07 |
Fig. 5. (a) Transfer characteristics of the ZTO/Yb2O3 TFTs as a function of annealing temperature of ZTO layer without aging treatment. (b) Transfer characteristics of the ZTO/Yb2O3 TFTs as a function of annealing temperature of ZTO layer aged for 10 days. The inset is the transfer characteristics of 10 days aged ZTO/Yb2O3 TFTs at the low operating voltage of 2 V. (c) Transfer characteristics of the ZTO/Yb2O3 TFTs as a function of annealing temperature of ZTO layer aged for 20 days. The inset is the output characteristics of the ZTO/Yb2O3 TFTs as a function of annealing temperature of ZTO layer. (d) Transfer characteristics of the 500 °C ZTO/510 ℃ Yb2O3 TFTs aged for various days.
Fig. 7. (a) Two channel surface conduction modes of ZTO/Yb2O3 TFTs as well as the leakage current path resulting from grain boundary and interface defect. (b) The model of electron transmission in aging diffusion. (c) Model of biased interface change under PBS and NBS experiments.
Fig. 8. (a) Transfer curves of ZTO/Yb2O3 TFTs under PBS tests. (b) The VTH shift as a function of stress time. The inset shows the time dependence of ΔVTH in the ZnSnO/Yb2O3 TFTs under the bias stress of 1.5 V.
Fig. 9. (a) The immediate second PBS result of 460 ℃C-ZTO/510 ℃-Yb2O3 TFTs and recovery under the 1.5 V bias voltage. (b) NBS result and recovery under the -1.5 V bias voltage.
Fig. 10. (a) Transfer curves of aged 40 days ZTO/Yb2O3 TFTs under PBS tests. (b) The VTH shift as a function of stress time. The inset shows the time dependence of ΔVTH in the ZnSnO TFT with the Yb2O3 gate dielectric under the bias stress of 1.5 V.
Fig. 11. (a) The resistor-loaded inverter structure with 460 ℃-ZTO/510 ℃-Yb2O3 TFTs. (b) The voltage transfer characteristic (VTC) curves Voltage at various VDD values. (c) The gains of the inverter at various VDD values. (d) Dynamic switching behavior of the inverter under AC square waves at 1 Hz.
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