J. Mater. Sci. Technol. ›› 2021, Vol. 67: 186-196.DOI: 10.1016/j.jmst.2020.06.032
• Research article • Previous Articles Next Articles
Yifan Wang, Yanli Lu*(), Jing Zhang, Wenchao Yang, Changlin Yang, Pan Wang, Xiaoqing Song, Zheng Chen
Received:
2020-04-16
Revised:
2020-05-23
Accepted:
2020-06-01
Published:
2021-03-20
Online:
2021-04-15
Contact:
Yanli Lu
About author:
* E-mail address: luyanli@nwpu.edu.cn (Y. Lu).Yifan Wang, Yanli Lu, Jing Zhang, Wenchao Yang, Changlin Yang, Pan Wang, Xiaoqing Song, Zheng Chen. Investigation of the 12 orientations variants of nanoscale Al precipitates in eutectic Si of Al-7Si-0.6Mg alloy[J]. J. Mater. Sci. Technol., 2021, 67: 186-196.
Fig. 1. (a) The mechanical properties of the castings made by different techniques. (b)-(c) OM images of the samples in (a). (d) The BF TEM image of the eutectic Si in the casting made by rapid solidification. (e)-(f) Eutectic Si morphologies of the longitudinal section of fractured samples in (b) and (c), respectively.
Fig. 2. (a) The back scattered electron image of the region near the fracture. (b) The BF TEM image of a eutectic Si closed to the fracture. (c) enlarged image from rectangle area in (b). (d-f) STEM HAADF and element mapping images taken from a eutectic Si particle, showing Al precipitates and a “dark contrast region”around the precipitates (as indicated by the open arrow).
Fig. 3. The HRTEM images, moiré fringes simulation images, corresponding FFT patterns and simulated diffraction patterns of three variants of nanoscale Al precipitates on the (111)Si plane.
Variants | Orientation relationships: (HKL)Al//(hkl)Si |
---|---|
1 | (001)//(111); (110)//($\bar{1}$10); (1$\bar{1}$0)//(11$\bar{2}$) |
2 | (001)//(111); (110)//($\bar{1}$01); ($\bar{1}$10)//(1$\bar{2}$1) |
3 | (001)//(111); (110)//(01$\bar{1}$); ($\bar{1}$10)//($\bar{2}$11) |
4 | (001)//($\bar{1}$11); (110)//(110); ($\bar{1}$10)//($\bar{1}$$\bar{2}$1) |
5 | (001)//($\bar{1}$11); (110)//(101); ($\bar{1}$10)//(12$\bar{1}$) |
6 | (001)//($\bar{1}$11); (110)//(0$\bar{1}$1); ($\bar{1}$10)//(211) |
7 | (001)//(1$\bar{1}$1); (110)//(110); ($\bar{1}$10)//($\bar{1}$12) |
8 | (001)//(1$\bar{1}$1); (110)//(10$\bar{1}$); ($\bar{1}$10)//($\bar{2}$$\bar{1}$1) |
9 | (001)//(1$\bar{1}$1); (110)//(011); ($\bar{1}$10)//(121) |
10 | (001)//(1$\bar{1}$1); (110)//($\bar{1}$10); ($\bar{1}$10)//(2$\bar{1}$1) |
11 | (001)//(1$\bar{1}$1); (110)//(101); ($\bar{1}$10)//(1$\bar{2}$$\bar{1}$) |
12 | (001)//(1$\bar{1}$1); (110)//(011); ($\bar{1}$10)//(112) |
Table 1 All 12 possible orientation relationships between the nanoscale Al precipitates and Si matrix.
Variants | Orientation relationships: (HKL)Al//(hkl)Si |
---|---|
1 | (001)//(111); (110)//($\bar{1}$10); (1$\bar{1}$0)//(11$\bar{2}$) |
2 | (001)//(111); (110)//($\bar{1}$01); ($\bar{1}$10)//(1$\bar{2}$1) |
3 | (001)//(111); (110)//(01$\bar{1}$); ($\bar{1}$10)//($\bar{2}$11) |
4 | (001)//($\bar{1}$11); (110)//(110); ($\bar{1}$10)//($\bar{1}$$\bar{2}$1) |
5 | (001)//($\bar{1}$11); (110)//(101); ($\bar{1}$10)//(12$\bar{1}$) |
6 | (001)//($\bar{1}$11); (110)//(0$\bar{1}$1); ($\bar{1}$10)//(211) |
7 | (001)//(1$\bar{1}$1); (110)//(110); ($\bar{1}$10)//($\bar{1}$12) |
8 | (001)//(1$\bar{1}$1); (110)//(10$\bar{1}$); ($\bar{1}$10)//($\bar{2}$$\bar{1}$1) |
9 | (001)//(1$\bar{1}$1); (110)//(011); ($\bar{1}$10)//(121) |
10 | (001)//(1$\bar{1}$1); (110)//($\bar{1}$10); ($\bar{1}$10)//(2$\bar{1}$1) |
11 | (001)//(1$\bar{1}$1); (110)//(101); ($\bar{1}$10)//(1$\bar{2}$$\bar{1}$) |
12 | (001)//(1$\bar{1}$1); (110)//(011); ($\bar{1}$10)//(112) |
Variants | [UVW]Al//[uvw]Si | (HKL)Al//(hkl)Si |
---|---|---|
1 | [001]//[111] | (220)//($2\bar{2}0$);(1$\bar{4}$0)//(20$\bar{2}$);(1$\bar{1}$2)//(220);(4$\bar{1}$0)//(02$\bar{2}$) |
2 | [001]//[111] | (220)//($\bar{2}$02);(1$\bar{4}$0)//(02$\bar{2}$);($\bar{1}$12)//(202);(4$\bar{1}$0)//($\bar{2}$20) |
3 | [001]//[111] | (220)//(02$\bar{2}$);($\bar{1}$40)//($\bar{2}$20);($\bar{1}$12)//(022);(4$\bar{1}$0)//(20$\bar{2}$) |
4 | [311]//[111] | (220)//(220);($\bar{1}$40)//(02$\bar{2}$);($\bar{1}$12)//($\bar{2}$20);(4$\bar{1}$0)//(202) |
5 | [131]//[111] | (220)//(202);($\bar{1}$40)//(220);($\bar{1}$1$\bar{2}$)//(20$\bar{2}$);($\bar{4}$10)//(02$\bar{2}$) |
6 | [$\bar{2}$21]//[111] | (220)//(02$\bar{2}$);($\bar{1}$40)//(202);($\bar{1}$12)//(022);($\bar{4}$10)//(220) |
7 | [131]//[111] | (220)//(220);($\bar{1}$40)//(022);($\bar{1}$1$\bar{2}$)//($\bar{2}$20);(4$\bar{1}$0)//(02$\bar{2}$) |
8 | [$\bar{2}$21]//[111] | (220)//(20$\bar{2}$);($\bar{1}$40)//(220);($\bar{1}$12)//(202);($\bar{4}$10)//(022) |
9 | [311]//[111] | (220)//(022);(1$\bar{4}$0)//(20$\bar{2}$);(1$\bar{1}$$\bar{2}$)//(02$\bar{2}$);($\bar{4}$10)//(220) |
10 | [$\bar{2}$21]//[111] | (220)//($\bar{2}$20);($\bar{1}$40)//(022);($\bar{1}$12)//(220);($\bar{4}$10)//(202) |
11 | [311]//[111] | (220)//(202);(1$\bar{4}$0)//($\bar{2}$20);($\bar{1}$12)//(20$\bar{2}$);(4$\bar{1}$0)//(022) |
12 | [131]//[111] | (220)//(022);($\bar{1}$40)//(202);(1$\bar{1}$2)//(02$\bar{2}$);(4$\bar{1}$0)//($\bar{2}$20) |
Table 2 The orientation relationships of 12 orientations of nanoscale Al precipitates under the given [111]Si zone axis.
Variants | [UVW]Al//[uvw]Si | (HKL)Al//(hkl)Si |
---|---|---|
1 | [001]//[111] | (220)//($2\bar{2}0$);(1$\bar{4}$0)//(20$\bar{2}$);(1$\bar{1}$2)//(220);(4$\bar{1}$0)//(02$\bar{2}$) |
2 | [001]//[111] | (220)//($\bar{2}$02);(1$\bar{4}$0)//(02$\bar{2}$);($\bar{1}$12)//(202);(4$\bar{1}$0)//($\bar{2}$20) |
3 | [001]//[111] | (220)//(02$\bar{2}$);($\bar{1}$40)//($\bar{2}$20);($\bar{1}$12)//(022);(4$\bar{1}$0)//(20$\bar{2}$) |
4 | [311]//[111] | (220)//(220);($\bar{1}$40)//(02$\bar{2}$);($\bar{1}$12)//($\bar{2}$20);(4$\bar{1}$0)//(202) |
5 | [131]//[111] | (220)//(202);($\bar{1}$40)//(220);($\bar{1}$1$\bar{2}$)//(20$\bar{2}$);($\bar{4}$10)//(02$\bar{2}$) |
6 | [$\bar{2}$21]//[111] | (220)//(02$\bar{2}$);($\bar{1}$40)//(202);($\bar{1}$12)//(022);($\bar{4}$10)//(220) |
7 | [131]//[111] | (220)//(220);($\bar{1}$40)//(022);($\bar{1}$1$\bar{2}$)//($\bar{2}$20);(4$\bar{1}$0)//(02$\bar{2}$) |
8 | [$\bar{2}$21]//[111] | (220)//(20$\bar{2}$);($\bar{1}$40)//(220);($\bar{1}$12)//(202);($\bar{4}$10)//(022) |
9 | [311]//[111] | (220)//(022);(1$\bar{4}$0)//(20$\bar{2}$);(1$\bar{1}$$\bar{2}$)//(02$\bar{2}$);($\bar{4}$10)//(220) |
10 | [$\bar{2}$21]//[111] | (220)//($\bar{2}$20);($\bar{1}$40)//(022);($\bar{1}$12)//(220);($\bar{4}$10)//(202) |
11 | [311]//[111] | (220)//(202);(1$\bar{4}$0)//($\bar{2}$20);($\bar{1}$12)//(20$\bar{2}$);(4$\bar{1}$0)//(022) |
12 | [131]//[111] | (220)//(022);($\bar{1}$40)//(202);(1$\bar{1}$2)//(02$\bar{2}$);(4$\bar{1}$0)//($\bar{2}$20) |
Fig. 4. Superimposed [001]Al//[111]Si stereographic projections showing that (a) the orientation relationships between Al precipitate and Si matrix; (b) the [$\bar{2}$21]Al, [131]Al and [311]Al directions are also parallel to the [1$\bar{1}1$]Si, [$\bar{1}\bar{1}1$]Si and [$\bar{1}11$]Si directions, respectively.
Fig. 5. Simulated results calculated from the transition matrix under the four [001]Al, [311]Al, [131]Al and [$\bar{2}$21]Al zone axes of Al precipitates, respectively, and the simulated [111]Si diffraction patterns.
Fig. 6. The HRTEM images, corresponding FFT patterns and simulated diffraction patterns of two nanoscale Al precipitates on the (111)Si plane: (a)-(c) Orientation type 6; (d)-(f) Orientation type 7.
Fig. 7. The interfaces between nanoscale Al precipitate and Si matrix: (a) (220)Al//($\bar{2}$20)Si; (b) (1$\bar{4}$0)Al//(20$\bar{2}$)Si; (c) (1$\bar{1}$2)Al//(220)Si. The yellow atoms are Si, the pink atoms are Al.
Fig. 8. Crystallographic relationship at the interface between nanoscale Al precipitate and Si matrix: (a) (220)Al//($\bar{2}$20)Si; (b) (1$\bar{4}$0)Al//20$\bar{2}$)Si; (c) (1$\bar{1}$2)Al//(220)Si.
Interfaces | $\left[ \text{uvw} \right]_{s}^{i}$ | $\left[ \text{uvw} \right]_{\text{n}}^{i}$ | $d\left[ \text{uvw} \right]_{s}^{i}$ | $d\left[ \text{uvw} \right]_{\text{n}}^{i}$ | θ, deg | $d\left[ \text{uvw} \right]_{s}^{i}$cosθ | δ/% |
---|---|---|---|---|---|---|---|
(1$\bar{1}$2)Al//(220)Si | [001]Si | [1$\bar{1}$$\bar{1}$]Al | 5.431 | 7.014 | 0 | 5.431 | 23.72 |
1/2[ | 1/2[ | 3.840 | 2.863 | 0 | 3.840 | ||
1/2[ | 1/2[3$\bar{1}$$\bar{2}$]Al | 6.651 | 7.576 | 13.06 | 6.48 | ||
(220)Al//($\bar{2}$20)Si | [001]Si | [$\bar{1}$11]Al | 5.431 | 7.014 | 0 | 5.431 | 22.57 |
1/2[$\bar{1}$10]Si | 1/2[1$\bar{1}$2]Al | 3.840 | 4.960 | 0 | 3.840 | ||
1/2[$\bar{1}$12]Si | 1/2[$\bar{1}$14]Al | 6.651 | 8.590 | 0 | 6.651 | ||
(1$\bar{4}$0)Al//(20$\bar{2}$)Si | [0$\bar{2}$0]Si | 1/2[$\bar{4}$$\bar{1}$3]Al | 10.861 | 10.324 | 0.776 | 10.86 | 17.77 |
1/4[$\bar{1}$$\bar{1}$1]Si | [ | 2.352 | 4.050 | 0 | 2.352 | ||
1/4[1$\bar{9}$1]Si | 1/2[$\bar{4}$$\bar{1}$5]Al | 12.369 | 13.122 | 5.52 | 12.312 |
Table 3 Parameters for the Bramfitt planar disregistry equation (aAl = 4.05 ?, aSi = 5.431 ?) (d is in ?).
Interfaces | $\left[ \text{uvw} \right]_{s}^{i}$ | $\left[ \text{uvw} \right]_{\text{n}}^{i}$ | $d\left[ \text{uvw} \right]_{s}^{i}$ | $d\left[ \text{uvw} \right]_{\text{n}}^{i}$ | θ, deg | $d\left[ \text{uvw} \right]_{s}^{i}$cosθ | δ/% |
---|---|---|---|---|---|---|---|
(1$\bar{1}$2)Al//(220)Si | [001]Si | [1$\bar{1}$$\bar{1}$]Al | 5.431 | 7.014 | 0 | 5.431 | 23.72 |
1/2[ | 1/2[ | 3.840 | 2.863 | 0 | 3.840 | ||
1/2[ | 1/2[3$\bar{1}$$\bar{2}$]Al | 6.651 | 7.576 | 13.06 | 6.48 | ||
(220)Al//($\bar{2}$20)Si | [001]Si | [$\bar{1}$11]Al | 5.431 | 7.014 | 0 | 5.431 | 22.57 |
1/2[$\bar{1}$10]Si | 1/2[1$\bar{1}$2]Al | 3.840 | 4.960 | 0 | 3.840 | ||
1/2[$\bar{1}$12]Si | 1/2[$\bar{1}$14]Al | 6.651 | 8.590 | 0 | 6.651 | ||
(1$\bar{4}$0)Al//(20$\bar{2}$)Si | [0$\bar{2}$0]Si | 1/2[$\bar{4}$$\bar{1}$3]Al | 10.861 | 10.324 | 0.776 | 10.86 | 17.77 |
1/4[$\bar{1}$$\bar{1}$1]Si | [ | 2.352 | 4.050 | 0 | 2.352 | ||
1/4[1$\bar{9}$1]Si | 1/2[$\bar{4}$$\bar{1}$5]Al | 12.369 | 13.122 | 5.52 | 12.312 |
Fig. 9. (a) The HRTEM image of a nanoscale Al precipitate under tensile stress; (b) IFFT image of selected ($\bar{2}$20)Si reflection; (c) Corresponding FFT patterns; (d) Supercell model of ($\bar{1}$12)Al/(202)Si type interface; (e) The work of adhesion of different interfaces; (f) The charge density differences of the ($\bar{1}$12)Al/(202)Si interface.
Fig. 10. (a) BF TEM image showing high density deformation nanotwins in the area containing a large number of nanoscale Al precipitates; (b) corresponding SADP, the double diffraction spots are indicated by white arrows; (c) BF TEM image of the precipitation zone (PZ) in the eutectic Si phase, indicating that there are high number density of stacking faults [43]; (d) BF TEM image of a pure precipitation-free zone (PFZ) in the eutectic Si phase, indicating that lower number density twins with wideness of around 10 nm are formed [43].
Number of layer, n | Surface energy (J/m2) | |
---|---|---|
Al($\bar{1}$12) Si(202) | ||
2 | 1.02 | - |
3 | 0.91 | 1.55 |
4 | 0.97 | - |
5 | 0.97 | 1.69 |
6 | 0.88 | - |
7 | 0.92 | 1.72 |
8 | 0.92 | - |
9 | - | 1.72 |
Table 4 Convergence of the surface energy (γs) with respect to the number of layers.
Number of layer, n | Surface energy (J/m2) | |
---|---|---|
Al($\bar{1}$12) Si(202) | ||
2 | 1.02 | - |
3 | 0.91 | 1.55 |
4 | 0.97 | - |
5 | 0.97 | 1.69 |
6 | 0.88 | - |
7 | 0.92 | 1.72 |
8 | 0.92 | - |
9 | - | 1.72 |
Fig. 11. Schematics of cracking process for eutectic Si particle when subjected to tensile stress: (a) without nanoscale Al precipitates; (b) with nanoscale Al precipitates.
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