Selective growth of tin whiskers from its alloys on Ti2SnC

doi:10.1016/j.jmst.2020.02.081

Abstract

Abstract:

The spontaneous growth of metal whiskers has been investigated for more than 70 years. However, there is still no agreement on its growth mechanism, and moreover, new characteristics of this whiskering phenomenon continue to emerge. In this study, Ti₂SnC is found to be capable of extracting Sn out of its alloys (SnBi, SnAg) by selectively growing Sn whiskers, and the Sn whiskers share the features of the traditional whiskers on platings and solders. Replacing the Ti₂SnC substrate with TiC or SiC, under the same conditions, however, the selective growth of Sn whisker does not happen, which means Ti₂SnC plays a critical role in it. Based on the unique crystal structure of Ti₂SnC, active Sn atoms diffusing through the basal planes of Ti₂SnC is proposed to explain the selectivity. The driving force is suggested to be the high interfacial energy between Ti₂SnC and tin. This study is of importance to further understand the growth mechanism of metallic whiskers, and it may be also possible to be harnessed to develop paradigm-shifting technologies of metal purification and metallic whisker/nanowire preparation.

Key words: Tin whisker, Selectivity, Ti₂SnC Tin alloy

Jingwen Tang, Peigen Zhang, Yushuang Liu, Chengjie Lu, Yan Zhang, Wei He, Wubian Tian, Wei Zhang, Zhengming Sun. Selective growth of tin whiskers from its alloys on Ti₂SnC[J]. J. Mater. Sci. Technol., 2020, 54: 206-210.

Figures/Tables 4

Fig. 1. SEM images of metallic whiskers on Ti2SnC/SnBi (a) and Ti2SnC/SnAg (b); (c, d) EDS of whiskers as shown in (a) and (b), respectively.

Fig. 2. SEM images of (a) TiC/SnBi and (b) SiC/SnBi.

Fig. 3. Wettability test showing that the contact angles between Ti2SnC and SnBi alloy is 142.8°: photo by camera (a) and OCA 25 (b).

Fig. 4. Schematic (a) and SEM image (b) of the layered crystal structure of Ti2SnC.

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Selective growth of tin whiskers from its alloys on Ti₂SnC

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