J. Mater. Sci. Technol. ›› 2020, Vol. 46: 145-155.DOI: 10.1016/j.jmst.2020.01.037
• Research Article • Previous Articles Next Articles
Yucheng Ji, Chaofang Dong*(
), Decheng Kong, Xiaogang Li
Received:2019-11-15
Revised:2019-12-30
Accepted:2020-01-02
Published:2020-06-01
Online:2020-06-19
Contact:
Chaofang Dong
Yucheng Ji, Chaofang Dong, Decheng Kong, Xiaogang Li. Design materials based on simulation results of silicon induced segregation at AlSi10Mg interface fabricated by selective laser melting[J]. J. Mater. Sci. Technol., 2020, 46: 145-155.
Fig. 1. Molecular dynamics model used to simulate the segregation of Si in high temperature.
| Si | Mg | Cu | Fe | Mn | Ni | Zn | Ti | Al |
|---|---|---|---|---|---|---|---|---|
| 9.20 | 0.48 | 0.26 | 0.24 | 0.21 | 0.17 | 0.25 | 0.15 | Bal. |
Table 1 Chemical composition of the AlSi10Mg alloy used in this study (wt. %).
| Si | Mg | Cu | Fe | Mn | Ni | Zn | Ti | Al |
|---|---|---|---|---|---|---|---|---|
| 9.20 | 0.48 | 0.26 | 0.24 | 0.21 | 0.17 | 0.25 | 0.15 | Bal. |
Fig. 2. Cluster analysis of Si under different temperature.
Fig. 3. The difference in laser melting temperature causes segregation or agglomeration of silicon atoms to form a silicon-rich phase at the edges: (a) 298.17 K and (b) 1499.43 K.
Fig. 4. The average moving distance and arrangement of atoms during rapid cooling: (a) 1500.72 K, (b) 305.63 K.
Fig. 5. 3D printed AlSi10Mg alloy micro-morphology formation mechanism diagram.
Fig. 6. XRD pattern of the 3D printed AlSi10Mg alloy to determine the surface crystal structure and possible suspected structure.
| Property | face | MgSiAl | Mg(SiAl)2 | Mg2Si6Al3 | Al | Si | Al9Si |
|---|---|---|---|---|---|---|---|
| Surface energy (J/m2) | 001 | 0.4835 | 0.6981 | 1.9047 | 0.9606 | 2.1537 | 1.7631 |
| 010 | 0.5708 | 1.0502 | 2.0720 | / | / | / | |
| 100 | 0.4981 | 1.0555 | 1.8384 | / | / | / | |
| 110 | 0.5811 | 0.6868 | 1.4242 | / | / | / | |
| 101 | 0.6818 | 1.2923 | 1.5164 | 0.8960 | 1.7954 | 2.6611 | |
| 111 | 0.6291 | 0.6219 | 2.1118 | 0.6490 | 2.3880 | 3.0944 | |
| Work function (eV) | 001 | 4.176 | 3.028 | 4.139 | 4.229 | 5.391 | 4.591 |
| 010 | 3.910 | 4.938 | 3.762 | / | / | / | |
| 100 | 3.949 | 4.892 | 3.930 | / | / | / | |
| 110 | 4.398 | 4.270 | 4.001 | / | / | / | |
| 101 | 4.224 | 4.022 | 4.013 | 4.165 | / | 4.727 | |
| 111 | 4.022 | 3.988 | 4.152 | 4.102 | 5.431 | 4.275 |
Table 2 Surface energy and work function of different structures.
| Property | face | MgSiAl | Mg(SiAl)2 | Mg2Si6Al3 | Al | Si | Al9Si |
|---|---|---|---|---|---|---|---|
| Surface energy (J/m2) | 001 | 0.4835 | 0.6981 | 1.9047 | 0.9606 | 2.1537 | 1.7631 |
| 010 | 0.5708 | 1.0502 | 2.0720 | / | / | / | |
| 100 | 0.4981 | 1.0555 | 1.8384 | / | / | / | |
| 110 | 0.5811 | 0.6868 | 1.4242 | / | / | / | |
| 101 | 0.6818 | 1.2923 | 1.5164 | 0.8960 | 1.7954 | 2.6611 | |
| 111 | 0.6291 | 0.6219 | 2.1118 | 0.6490 | 2.3880 | 3.0944 | |
| Work function (eV) | 001 | 4.176 | 3.028 | 4.139 | 4.229 | 5.391 | 4.591 |
| 010 | 3.910 | 4.938 | 3.762 | / | / | / | |
| 100 | 3.949 | 4.892 | 3.930 | / | / | / | |
| 110 | 4.398 | 4.270 | 4.001 | / | / | / | |
| 101 | 4.224 | 4.022 | 4.013 | 4.165 | / | 4.727 | |
| 111 | 4.022 | 3.988 | 4.152 | 4.102 | 5.431 | 4.275 |
Fig. 7. Possible effects of increased laser power on the structure and corrosion properties.
Fig. 8. The EDS and SKPFM image of selective laser melted AlSi10Mg: (a) EDS, (b) SKPFM.
Fig. 9. Galvanic corrosion morphology after immersion testing of AlSi10Mg fabricated by different laser powers: (a) 150 W, (b) 200 W, (c) 250 W.
Fig. 10. Differences in pitting of AlSi10Mg produced by different laser powers and TEM results of Al-Si solid solution at the subgrain boundary: (a) pitting statistics, (b) TEM image of the sample, (c) electronic diffraction pattern of Al9Si.
Fig. 11. The potentiodynamic polarization and Nyquist diagram of AlSi10Mg fabricated at different laser powers.
| Laser powers | Rs (Ω/cm2) | Q (μF/cm2) | Rf (Ω/cm2) | L (Henri) | RL (Ω/cm2) |
|---|---|---|---|---|---|
| 150 W | 45.1 | 1.428 × 10-5 | 9.629 × 1013 | 1.780 × 105 | 4.180 × 105 |
| 55.5 | 1.328 × 10-5 | 9.172 × 1012 | 9.684 × 105 | 5.759 × 105 | |
| 200 W | 31.11 | 0.972 × 10-5 | 3.416 × 1011 | 2.873 × 105 | 1.189 × 105 |
| 37.57 | 1.290 × 10-5 | 2.727 × 1011 | 5.399 × 104 | 0.731 × 105 | |
| 250 W | 33.91 | 1.052 × 10-5 | 1.333 × 105 | 1.711 × 106 | 3.248 × 105 |
| 34.14 | 0.946 × 10-5 | 3.405 × 105 | 3.479 × 107 | 3.104 × 105 |
Table 3 Equivalent circuit fitting values of samples prepared at different laser powers.
| Laser powers | Rs (Ω/cm2) | Q (μF/cm2) | Rf (Ω/cm2) | L (Henri) | RL (Ω/cm2) |
|---|---|---|---|---|---|
| 150 W | 45.1 | 1.428 × 10-5 | 9.629 × 1013 | 1.780 × 105 | 4.180 × 105 |
| 55.5 | 1.328 × 10-5 | 9.172 × 1012 | 9.684 × 105 | 5.759 × 105 | |
| 200 W | 31.11 | 0.972 × 10-5 | 3.416 × 1011 | 2.873 × 105 | 1.189 × 105 |
| 37.57 | 1.290 × 10-5 | 2.727 × 1011 | 5.399 × 104 | 0.731 × 105 | |
| 250 W | 33.91 | 1.052 × 10-5 | 1.333 × 105 | 1.711 × 106 | 3.248 × 105 |
| 34.14 | 0.946 × 10-5 | 3.405 × 105 | 3.479 × 107 | 3.104 × 105 |
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