J. Mater. Sci. Technol. ›› 2019, Vol. 35 ›› Issue (3): 330-333.DOI: 10.1016/j.jmst.2018.09.064

• Research Article • Previous Articles     Next Articles

Improvement on the interface properties of p-GaAs/n-InP heterojunction for wafer bonded four-junction solar cells

Mengyan Zhangab, Tao Ningc, Jie Chenb, Lijie Sunb*(), Lihua Zhoub   

  1. aDepartment of Electronic Engineering, Institute of Information Science and Technology, East China Normal University, Shanghai, 200241, China
    bState Key Laboratory of Space Power Technology, Shanghai Institute of Space Power Sources, Shanghai, 200245, China
    cSchool of Advanced Materials and Nanotechnology, Xidian University, Xi’an, 710071, China;
  • Received:2018-03-30 Revised:2018-04-11 Accepted:2018-04-12 Online:2019-03-15 Published:2019-01-18
  • Contact: Sun Lijie
  • About author:

    1 These authors contributed equally to this work.

Abstract:

The p-GaAs/n-InP heterojunction was fabricated by direct wafer bonding technology. The optimized atomic level contact between GaAs and InP is critical for getting good ohmic contact and removing the bubbles or voids at the interface, which is helpful to enhance the efficiency of wafer bonded multi-junction solar cells. Through the surface megasonic cleaning and the plasma treatment, we have achieved the high quality bonding interface without bubbles or voids and with interface resistivity of about 0.1 ohms/cm2. A GaInP/GaAs//InGaAsP/InGaAs 4-junction solar cell was prepared with the high efficiency of 34.4% (AM0) at 1 sun.

Key words: Solar cells, Wafer bonding, Interface properties, Heterojunction