J. Mater. Sci. Technol. ›› 2018, Vol. 34 ›› Issue (10): 1885-1890.DOI: 10.1016/j.jmst.2018.01.016
• Orginal Article • Previous Articles Next Articles
Fu-Long Sunab, Li-Yin Gaoab, Zhi-Quan Liuabc(), Hao Zhangc, Tohru Sugaharac, Shijo Nagaoc, Katsuaki Suganumac
Received:
2017-11-09
Revised:
2017-12-20
Accepted:
2017-12-22
Online:
2018-10-05
Published:
2018-11-01
Fu-Long Sun, Li-Yin Gao, Zhi-Quan Liu, Hao Zhang, Tohru Sugahara, Shijo Nagao, Katsuaki Suganuma. Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate[J]. J. Mater. Sci. Technol., 2018, 34(10): 1885-1890.
Fig. 1. (a) Cross-sectional SEM image of preferentially orientated nanotwinned Cu film electrodeposited with 30 mA cm-2 and 3 ml L-1 acid, (b) XRD pattern of wafer with 400 nm-thick Cu seed layer (substrate) and plated nanotwinned Cu (NT-Cu), (c) dark-field TEM image of nanoscale twins (GD: growth direction) and (d) corresponding electron diffraction pattern in which diffraction spots of matrix are denoted by solid lines and those of twins are denoted by dashed lines.
Fig. 2. Cross-sectional bright-field TEM images of plated Cu from (a) bottom part near substrate, (b) middle part of film and (c) top part near surface. The label at the upper left corner corresponds to those marked in Fig. 1(a).
Fig. 3. Microstructures of Cu film plated at different concentration of H2SO4: (a) 3 ml L-1; (b) 10 ml L-1; (c) 17 ml L-1; (d) 24 ml L-1; (e) 31 ml L-1; (f) histogram of twin thickness from Cu film in Fig. 3(c).
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