J. Mater. Sci. Technol. ›› 2017, Vol. 33 ›› Issue (11): 1386-1391.DOI: 10.1016/j.jmst.2017.03.014
• Orginal Article • Previous Articles Next Articles
Liu Shiqiab, Han Leic, Zou Yongtaod, Zhu Pinwend, Liu Baochangabd*()
Received:
2016-04-29
Revised:
2016-06-05
Accepted:
2016-07-31
Online:
2017-11-20
Published:
2018-01-25
Contact:
Liu Baochang
About author:
1 These two authors contributed equally to this paper.
Liu Shiqi, Han Lei, Zou Yongtao, Zhu Pinwen, Liu Baochang. Polycrystalline diamond compact with enhanced thermal stability[J]. J. Mater. Sci. Technol., 2017, 33(11): 1386-1391.
Fig. 1. Schematic of newly-designed structure for the HPHT sintering of PDC, showing the dynamic process of HPHT sintering for the Si, diamond and WC/Co substrate (a) and the well-sintered three-layered PDC (b). Note: the top layer is diamond-SiC composites.
Fig. 3. (a) Optical image of the well-sintered PDC. Note: The areas of b, c and d symbolize the silicon layer, diamond layer and WC substrate, respectively; (b), (c), (d) SEM images of the three layers for PDC synthesized at 5.5-7 GPa and 1650-1750 °C for 10 min. The corresponding EDS measurements on the different areas shown in the SEM images of layers b and c are displayed in Fig. 3(e-h).
Fig. 5. XRD patterns of the fracture surface of PDC sample fabricated at 5.5-7.0 GPa and 1650-1750 °C. Note: the representative area is from the silicon and diamond layers. (a) XRD patterns of the top of fracture surface of PDC sample; (b) and (c) XRD patterns of the middle; and bottom (d).
Fig. 6. Raman spectra (b) of the well-sintered PDC at 5.5-7.0 GPa and 1650-1750 °C for 10 min, collected from different area (a) of the PDC specimen. The numbers are labeled in the different area of the cross section of the specimen. Note: the border of the sample surface labelled e; the center of the cross section is f; the boundary between the diamond and substrate is g.
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