J. Mater. Sci. Technol. ›› 2015, Vol. 31 ›› Issue (6): 542-555.DOI: 10.1016/j.jmst.2015.01.006
• Orginal Article • Previous Articles Next Articles
Dong Liang1, 3, Juan Du2, Xuan P.A. Gao1, *
Received:
2014-09-28
Online:
2015-06-20
Published:
2015-07-23
Contact:
*Corresponding author. Prof., Ph.D.; Tel.: +1 2163684031. E-mail address: Supported by:
Dong Liang, Juan Du, Xuan P.A. Gao. InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review[J]. J. Mater. Sci. Technol., 2015, 31(6): 542-555.
(a) A scheme of a single NW FET with source (S) and drain (D) electrodes contacting an NW on silicon substrate (gray) with oxide dielectric on surface (purple). Lower panel illustrates ballistic (top) or diffusive (down) transport in NW. (b) Channel conductance G vs top gate voltage Vgs at 120 K for InAs NW with w = 26 nm and L = 60 nm-510 nm. The top gate voltage was applied via 15 nm ZrO2 insulating layer on the NW. The plateaus indicate 1D subband fillings. (c) Conductance G vs back gate Vg at 20 K and 200 K for w = 60 nm and L = 2 μ
m of an InAs NW FET device. The back gate voltage was applied via 300 nm SiO2 layer on the Si substrate. Due to larger NW diameter and smaller subband spacing, more plateaus are observed. The plateaus are smeared up at high temperature. Panel (b) is reproduced with permission from Ref. [32].
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