Fabrication and Characterization of Undoped and Cobalt-doped ZnO Based UV Photodetector Prepared by RF-sputtering

doi:10.1016/j.jmst.2013.10.007

Abstract

Abstract:

Undoped and 1 at.% Co-doped ZnO nanostructure based UV photodetectors were successfully fabricated by RF-magnetron sputtering technique with comb like Pt electrodes. Cobalt ions were successfully incorporated into the lattice of the ZnO nanostructure without changing its wurtzite structure. It was indicated that Co-doping can effectively adjust the luminescence properties of the ZnO nanostructure. The undoped and Co-doped ZnO photodetectors were observed to have photosensitivities of 1.44 × 10⁴ % and 8.57 × 10² % and low dark currents of 9.74 × 10⁻⁸ A and 1.18 × 10⁻⁷ A, respectively.

Key words: Characterization, Co-doped ZnO, UV photodetector

Husam S. Al-Salman, M.J. Abdullah. Fabrication and Characterization of Undoped and Cobalt-doped ZnO Based UV Photodetector Prepared by RF-sputtering[J]. J. Mater. Sci. Technol., DOI: 10.1016/j.jmst.2013.10.007.

References

[1] M. Chen, L. Hu, J. Xu, M. Liao, L. Wu, X. Fang, Small 7 (2011)2449-2453.

[2] R.R. Prabhakar, N. Mathews, K.B. Jinesh, K.R.G. Karthik, S.S.Pramana, B. Varghese, C.H. Sow, S. Mhaisalkar, J. Mater. Chem. 22(2012) 9678-9683.

[3] H. Sheng, S. Muthukumar, N.W. Emanetoglu, Y. Lu, Appl. Phys.Lett. 80 (2002) 2132-2134.

[4] K. Ip, Y.W. Heo, K.H. Baik, D.P. Norton, S.J. Pearton, S. Kim, J.R.LaRoche, F. Ren, Appl. Phys. Lett. 84 (2004) 2835-2837.

[5] H.L. Mosbacker, Y.M. Strzhermechny, B.D. White, P.E. Smith, D.C. Look, D.C. Reynolds, C.W. Litton, L.J. Brillson, Appl. Phys.Lett. 87 (2005) 012102.

[6] B. Angadi, H.C. Park, H.W. Choi, J.W. Choi, W.K. Choi, J.Phys. D 40 (2007) 1422-1425.

[7] S.J. Young, S.J. Chang, L.W. Ji, T.H. Meen, C.H. Hsiao, K.W. Liu,K.J. Chen, Z.S. Hu, Microelectron. Eng. 88 (2011) 113-116.

[8] N.H. Al-Hardan, M.J. Abdullah, H. Ahmad, A.A. Aziz, L.Y. Low,Solid State Electron. 55 (2011) 59-63.

[9] H. Yang, S. Nie, Mater. Chem. Phys. 114 (2009) 279-282.

[10] G. Murugadoss, J. Mater. Sci. Technol. 28 (2012) 587-593.

[11] J. Sun, F. Juan, H. Huang, J. Zhao, Z. Hu, X. Zhang, Y. Wang,Appl. Surf. Sci. 257 (2010) 921-924.

[12] O. Lupan, L. Chow, G. Chai, L. Chernyak, O. Lopatiuk, Phys.Status Solidi A 205 (2008) 2673-2678.

[13] T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science 287(2000) 1019-1022.

[14] W. Baiqi, S. Xudong, F. Qiang, J. Iqbal, L. Yan, F. Honggang,Y. Dapeng, Physica E 41 (2009) 413-417.

[15] M. Sima, I. Enculescu, M. Sima, M. Enache, E. Vasile, J.P.Ansermet, Phys. Status Solidi B 244 (2007) 1522-1527.

[16] Y.S.Wang, P.J.Thomas, P.Obrien, J. Phys. Chem.B110 (2006) 21412.

[17] H. Hao, M. Qin, P. Li, J. Alloy. Compd. 515 (2012) 143-148.

[18] Y.Q. Chang, P.W. Wang, S.L. Ni, Y. Long, X.D. Li, J. Mater. Sci.Technol. 28 (2012) 313-316.

[19] M. Nirmala, P. Smitha, A. Anukaliania, Superlattices Microstruct.50 (2011) 563-571.

[20] R. Elilarassi, G. Chandrasekaran, Mater. Sci. Semicond. Process. 14(2011) 179-183.

[21] M.G. Nair, M. Nirmala, K. Rekha, A. Anukaliani, Mater. Lett. 65(2011) 1797-1800.

[22] Y. Liu, Q. Fang, M. Wu, Y. Li, Q. Lv, J. Zhou, B. Wang, J. Phys. D40 (2007) 4592-4596.

[23] J.P. Borah, K.C. Sarma, Acta Phys. Pol. A 114 (2008) 713-719.

[24] P. Prepelita, R. Medianu, B. Sbarcea, F. Garoi, M. Filipescu, Appl.Surf. Sci. 256 (2010) 1807-1811.

[25] M. Lvill, S.J. Pearton, S. Rawal, L. Leu, P. Sadik, R. Das, A.F.Hebard, M. Chisholm, J.D. Budai, D.P. Norton, New J. Phys. 10(2008) 065002.

[26] X. Liu, E. Shi, Z. Chen, H. Zhang, L. Song, H. Wang, S. Yao, J.Cryst. Growth 296 (2006) 135-140.

[27] S.M. Shaban, N.M. Saeed, R.M. Al-hadad, Indian J. Sci. Technol. 4(2011) 384-386.

[28] X.J. Zheng, Y.Q. Chen, T. Zhang, B. Yang, C.B. Jiang, B. Yuan,Z. Zhu, Sens. Actuators B: Chem. 147 (2010) 442-446.

[29] K.J. Chen, F.Y. Hung, S.J. Chang, S.J. Young, J. Alloy. Compd.479 (2009) 674-677.

[30] Z.Q. Xu, H. Deng, J. Xie, Y. Li, X.T. Zu, Appl. Surf. Sci. 253(2006) 476-479.

[31] J.H. He, Y.H. Lin, M.E. Mcconney, V.V. Tsukruk, Z.L. Wang,G. Bao, J. Appl. Phys. 102 (2007) 084303.

[32] B. Yuan, X.J. Zheng, Y.Q. Chen, B. Yang, T. Zhang, Solid State Electron 55 (2011) 49-53.

[33] N.N. Jandow, F.K. Yam, S.M. Thahab, K. Ibahim, H. Abu-Hassan,Mater. Lett. 64 (2010) 2366-2368.

[34] C.A. Johnson, T.C. Kaspar, S.A. Chambers, G.M. Salley, D.R.Gamelin, Phys. Rev. B: Condens. Matter 81 (2010) 125206.

[35] C.A. Johnson, A. Cohn, T. Kaspar, S.A. Chambers, G.M. Salley,D.R. Gamelin, Phys. Rev. B: Condens. Matter 84 (2011) 125203.

[36] S.S. Shinde, K.Y. Rajpure, Mater. Res. Bull. 46 (2011) 1734-1737.

[37] H. Kind, H. Yan, B. Messer, M. Law, P. Yang, Adv. Mater. 14(2002) 158-160.