Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy

doi:10.1016/j.jmst.2013.10.005

J. Mater. Sci. Technol.

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Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy

Yunyan Liu¹⁾, Shanying Yang²⁾, Gongxiang Wei¹⁾, Jiaoqing Pan³⁾, Yuzhen Yuan¹⁾, Chuanfu Cheng⁴⁾

1) School of Science, Shandong University of Technology, Zibo 255049, China
2) Laiwu Vocational and Technical College, Laiwu 271100, China
3) Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912,Beijing 100083, China
4) College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

Received:2012-05-17 Revised:2012-08-05 Online:2013-12-30 Published:2013-12-24
Contact: Y.Liu,S.Yang
Supported by:
National Natural Science Foundation of China under Grant No. 10974122, and Shandong Provincial Natural Science Foundation under Grant No. ZR2009FZ006. We are also grateful for the financial support of Open Project Foundation under Grant No.KLSMS-1005.

Abstract

Abstract:

Zn_1–xCo_xO (x = 0.05) thin films are deposited on sapphire (0001) substrates by laser-molecular beam epitaxy technique at different substrate temperatures. The structural, stress and morphology evolution features are investigated by means of X-ray diffraction and atomic force microscopy. The surface parameters of roughness exponent α, root mean square (RMS) roughness w and autocorrelation length ξ are calculated and the surface parameters are preliminarily analyzed. The values of α vary from 0.7 to 0.9. The RMS roughness w is less than 2.2 nm, and it increases with increasing T_s from 300 to 400 °C, and then decreases when T_s is 500 °C. The autocorrelation length ξ decreases monotonously with the increase in T_s from 300 to 500 °C, which indicates that the increase in T_s restrains the spread of the surface fluctuations until T_s is higher than 400 °C.

Key words: ZnO, Thin films, Stress, Morphology, Laser-molecular beam epitaxy (LMBE)

Yunyan Liu, Shanying Yang, Gongxiang Wei, Jiaoqing Pan, Yuzhen Yuan, Chuanfu Cheng. Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy[J]. J. Mater. Sci. Technol., DOI: 10.1016/j.jmst.2013.10.005.

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Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy

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