磁控溅射过程中衬底温度对MZO薄膜特性的影响Effects of Substrate Temperature on the Properties of Mo-doped ZnO Films Prepared by RF Magnetron Sputtering

J. Mater. Sci. Technol. ›› 2009, Vol. 25 ›› Issue (06): 785-788.

磁控溅射过程中衬底温度对MZO薄膜特性的影响Effects of Substrate Temperature on the Properties of Mo-doped ZnO Films Prepared by RF Magnetron Sputtering

Shenghao Han¹;修显武²;赵文静³

1. Department of Space Science and Applied Physics; Shandong University at Weihai
2. 山东师范大学
3.

收稿日期:2008-05-26 修回日期:2009-08-14 出版日期:2009-11-28 发布日期:2009-11-24
通讯作者: Shenghao Han
基金资助:
国家自然科学基金;国家自然科学基金;国家自然科学基金;国家自然科学基金;国家自然科学基金;国家自然科学基金;国家自然科学基金

Effects of Substrate Temperature on the Properties of Mo-doped ZnO Films Prepared by RF Magnetron Sputtering

Xianwu Xiu¹⁾, Yuping Cao¹⁾, Zhiyong Pang²⁾, Shenghao Han^2,3)

1) College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
2) School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
3) School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China

Received:2008-05-26 Revised:2009-08-14 Online:2009-11-28 Published:2009-11-24
Contact: Shengshen Han
Supported by:
the Natural Science Foundation of China (Grant Nos. 60676041 and 10778701)

摘要/Abstract

摘要：

使用射频磁控溅射法，在普通玻璃衬底上成功地制备出不同衬底温度的MZO透明导电薄膜。MZO薄膜为多镜结构，具有六角结构，沿着c轴择优取向生长。随着衬底温度增加，薄膜的结晶质量变差，电阻率明显增加。室温下溅射得到MZO薄膜具有最低电阻率9.2×10-4Ωcm，载流子迁移率高达30cm2V-1s-1。所有样品在可见光区的平均透过率都高于85%。随着衬底温度从室温增加到400℃，样品的光学带隙从3.30降低到3.25eV。

关键词: 氧化锌, 钼, 衬底温度, 磁控溅射

Abstract:

Transparent conducting molybdenum-doped zinc oxide (MZO) films were successfully prepared by radio frequency (RF) magnetron sputtering method on glass substrates under different substrate temperatures. The nature of MZO film is polycrystalline with hexagonal structure and a preferred orientation along c-axis. With increasing substrate temperature from room temperature to 400°C, the crystallinity of the films is deteriorated and the resistivity increases sharply due to both the decrease of carrier concentration and Hall mobility. The lowest resistivity achieved is 9.2×10^-4 Ω· cm with a high Hall mobility of 30 cm²·V^-1·s^-1 for the film deposited at room temperature. The average transmittance in the visible range exceeds 85% for all the samples. The optical band gap decreases from 3.30 to 3.25 eV with substrate temperature from room temperature to 400°C.

Key words: Zinc oxide, Molybdenum, Substrate temperature, Magnetron sputtering

Shenghao Han 修显武赵文静. 磁控溅射过程中衬底温度对MZO薄膜特性的影响Effects of Substrate Temperature on the Properties of Mo-doped ZnO Films Prepared by RF Magnetron Sputtering[J]. J. Mater. Sci. Technol., 2009, 25(06): 785-788.

Xianwu Xiu,Yuping Cao,Zhiyong Pang,Shenghao Han. Effects of Substrate Temperature on the Properties of Mo-doped ZnO Films Prepared by RF Magnetron Sputtering[J]. J Mater Sci Technol, 2009, 25(06): 785-788.

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