同质缓冲层对溅射法ZnO薄膜性能的影响Effects of Homo-buffer Layer on Properties of Sputter-deposited ZnO Films

J. Mater. Sci. Technol. ›› 2009, Vol. 25 ›› Issue (05): 691-694.

同质缓冲层对溅射法ZnO薄膜性能的影响Effects of Homo-buffer Layer on Properties of Sputter-deposited ZnO Films

黄健¹;王林军²;徐闰²;史伟民³;夏义本²

1. 上海大学
2.
3. 上海大学材料科学与工程学院

收稿日期:2008-06-02 修回日期:2009-06-08 出版日期:2009-09-28 发布日期:2009-10-10
通讯作者: 黄健

Effects of Homo-bu®er Layer on Properties of Sputter-deposited ZnO Films

Jian Huang, Linjun Wang, Run Xu, Weimin, Shi Yiben Xia

Received:2008-06-02 Revised:2009-06-08 Online:2009-09-28 Published:2009-10-10
Supported by:
the National Natural Science Foundation of China (No. 60877017)
Program for Changjiang Scholars and Innovative Research Team in University (No. IRT0739)
Shanghai Leading Academic Disciplines (S30107)
Innovation Program of Shanghai Municipal Education Commission (No. 08YZ04)

摘要/Abstract

摘要：

采用两步法用磁控溅射方法在自支撑金刚石衬底上实现了氧化锌薄膜的同质外延生长：先在自支撑金刚石衬底上用50瓦小功率溅射氧化锌缓冲层，然后用150瓦功率在缓冲层上生长氧化锌主层薄膜。为了比较，采用150瓦功率在自支撑金刚石衬底上直接生长了一个氧化锌薄膜样品。采用X射线衍射仪、拉曼光谱仪、半导体性能表征系统和原子力显微镜分别研究了同质缓冲层对氧化锌薄膜结构、光学、电学和表面形貌等性能的影响。研究结果表明，同质缓冲层有助于改善金刚石衬底上氧化锌薄膜的质量。

关键词: 自支撑金刚石;氧化锌薄膜;缓冲层;磁控溅射

Abstract:

Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency (RF) reactive magnetron sputtering method. ZnO buffer layers were deposited on freestanding diamond substrates at a low sputtering power of 50 W, and then ZnO main layers were prepared
on this buffer layer at a high sputtering power of 150 W. For comparison, a sample was also deposited directly on freestanding diamond substrate at a power of 150 W. The effects of ZnO buffer layers on the structural, optical, electrical and morphological properties of the ZnO main layer were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, semiconductor characterization system and atomic force microscopy (AFM) respectively. The experimental results suggested that homo-buffer layer was helpful to improve the crystalline quality of ZnO/diamond heteroepitaxial films.

Key words: Freestanding diamond, ZnO film, Buffer layer, Magnetron sputtering

中图分类号:

黄健王林军徐闰史伟民夏义本. 同质缓冲层对溅射法ZnO薄膜性能的影响Effects of Homo-buffer Layer on Properties of Sputter-deposited ZnO Films[J]. J. Mater. Sci. Technol., 2009, 25(05): 691-694.

Jian Huang,Linjun Wang,Run Xu,Weimin Shi,Yiben Xia. Effects of Homo-bu®er Layer on Properties of Sputter-deposited ZnO Films[J]. J Mater Sci Technol, 2009, 25(05): 691-694.

参考文献

[1 ] W. Gao and Z. Li: Ceram. Int., 2004, 30, 1155.
[2 ] Q.A. Xu, J.W. Zhang, K.R. Ju, X.D. Yang and X. Hou: J. Crystal Growth, 2006, 289, 44.
[3 ] C.X. Wang, G.W. Yang, C.X. Gao, H. W. Liu , Y. H. Han , J. F. Luo and G. T. Zou: Carbon, 2004, 42, 317.
[4 ] T. Lamara, M. Belmahi, O. Elmazria, L. L. Brizoual, J. Bougdira, M. Remy and P. Alnot: Diamond Relat. Mater., 2004, 13, 581.
[5 ] J.M. Liu, Y.B. Xia, L.J.Wang, Q.F. Su and W.M. Shi: Appl. Surf. Sci., 2007, 253, 5218.
[6 ] T. Matsuda, M. Furuta, T. Hiramatsu, C. Li, H. Furuta, H. Hokarid and T. Hirao: J. Crystal Growth, 2008, 310, 31.
[7 ] S. Fujihara, C. Sasaki and T. Kimura: Appl. Surf. Sci., 2001, 180, 341.
[8 ] K. Tankala, T. Debroy and M. Alam: J. Mater. Res., 1990, 5, 2483.
[9 ] J. Liu, W.J. Weng, W.H. Ding, K. Cheng, P.Y. Du, G. Shen and G.R. Han: Surf. Coat. Tech., 2005, 198, 274.
[10] A. Vescan, I. Daumiller, P. Gluche, W. Ebert and E. Kohn: Diamond Relat. Mater., 1998, 7, 581.
[11] H. Noda, A. Hokazono and H. Kawarada: Diamond Relat. Mater., 1997, 6, 685.
[12] C.X. Wang, G.W. Yang, T.C. Zhang, H.W. Liu, Y.H. Han, J.F. Luo, C.X. Gao and G.T. Zou: Diamond Relat. Mater., 2003, 12, 1548.
[13] J.M. Liu, Y.B. Xia, L.J.Wang, Q.F. Su and W.M. Shi: J. Crystal Growth, 2007, 300, 353.
[14] M. Yoshikawa, G. Katagiri, H. Ishida, A. Ishitani, M. Ono and K. Matsumura: Appl. Phys. Lett., 1989, 55(25), 2608.
[15] M. Silveira, M. Becucci, E. Castellucci, F.P. Mattiot, V. Barbarossa, R. Tomaciello and F. Galluzzi: Diamond Relat. Mater., 1993, 9, 1257.
[16] J.M. Calleja and M. Cardona: Phys. Rev. B, 1977, 16, 3753.
[17] K.A. Alim, V.A. Fonoberov and A.A. Balandin: Appl. Phys. Lett., 2005, 86, 053103.
[18] S. Cho, J. Ma, Y. Kim, Y. Sun, G.K.L. Wong and J.B. Ketterson: Appl. Phys. Lett., 1999, 75(18), 2761.
[19] S.A. Studenikin, N. Golego and M. Cocivera: J. Appl. Phys., 1998, 84(4), 2287.
[20] K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt and B.E. Gnade: J. Appl. Phys., 1996, 79(10), 7983.
[21] L. Spanhel and M.A. Anderson: J. Am. Chem. Soc., 1991, 113, 2826.