[1 ] Z.L. Wang, K.Y. Xiang, Y. Ding, P. Gao, W.L. Hughes, R. Yang and Y. Zhang: Adv. Funct. Mater., 2004, 14, 943.
[2 ] J.Q. Hu and Y. Bando: Appl. Phys. Lett., 2003, 82, 1401.
[3 ] J. Cheng, R. Guo and Q. M.Wang: Appl. Phys. Lett., 004, 85, 5140.
[4 ] X.H. Sun, S. Lam, T.K. Sham, F. Heigl, A. u1rgensen, N.B. Wong: J. Phys. Chem. B, 2005, 09, 3120.
[5 ] L. Vayssieres, K. Keis, E.E. Lindquist, A. Hagfeldt: J. hys. Chem. B, 2001, 105, 3350.
[6 ] S.J. Henley, M.N.R. Ashfold, D.P. Nicholls, P. Wheatley and D. Cherns: Appl. Phys. A, 2004, 79, 1169.
[7 ] C. Jiang, W. Zhang, G. Zou, W. Yu and Y. Qian: J. hys. Chem. B, 2005, 109, 1361.
[8 ] C.L. Kuo, T.J. Kuo and M.H. Huang: J. Phys. Chem. , 2005, 109, 20115.
[9 ] Y.H. Yang, B. Wang and G.W. Yang: Nanotechnology, 2006, 17, 5557.
[10] Y.J. Kim, C.H. Lee, Y.J. Hong, G.C. Yi, S.S. Kim and H. Cheong: Appl. Phys. Lett., 2006, 89, 163128.
[11] Y. Dai, Y. Zhang and Z.L. Wang: Solid State Commun., 2003, 126, 629.
[12] F.Wang, Z. Ye, D. Ma, L. Zhu and F. Zhuge: J. Cryst. Growth, 2004, 274, 447.
[13] H. Iwanaga, M. Fujii and S. Takeuchi: J. Cryst. Growth, 1993, 134, 275.
[14] ÄU. ÄOzgÄur, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Do·gan, V. Avrutin, S.J. Cho and H. Morko»c: J. Appl. Phys., 2005, 98, 041301.
[15] X. Zhou, Z.X. Xie, Z.Y. Jiang, Q. Kuang, S.H. Zhang, T. Xu, R.B. Huang and L.S. Zheng: Chem. Commun., 2005, 5572.
[16] F.Q. He and Y.P. Zhao: Appl. Phys. Lett., 2006, 88, 193113.
[17] Z.L. Wang: J. Phys.: Condens. Matter, 2004, 16, R829.
[18] M.H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber and P.D. Yang: Adv. Mater., 2001, 13, 113.