J. Mater. Sci. Technol. ›› 2009, Vol. 25 ›› Issue (01): 102-104.

• Letters • 上一篇    下一篇

Vanadium-Doped Semi-Insulating 6H-SiC for Microwave Power Device Applications

宁丽娜1;冯志宏2;王英民3;张凯1;冯震2;徐现刚4   

  1. 1) State Key Laboratory of Crystal Materials; Shandong University; Jinan 250100; China
    2) Hebei Semiconductor Research Institute; Shijiazhuang 050051; China
  • 收稿日期:2007-12-24 修回日期:2008-03-10 出版日期:2009-01-28 发布日期:2009-10-10
  • 通讯作者: 徐现刚
  • 基金资助:

    国家自然科学基金;国家高技术研究发展计划（863）

Vanadium-Doped Semi-Insulating 6H-SiC for Microwave Power Device Applications

Li′na Ning1), Zhihong Feng2), Yingmin Wang1), Kai Zhang1), Zhen Feng2) and Xiangang Xu1)†   

  1. 1) State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
    2) Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • Received:2007-12-24 Revised:2008-03-10 Online:2009-01-28 Published:2009-10-10
  • Contact: Xiangang Xu

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摘要：

通过钒掺杂升华法生长出了电阻率大于1×106 ohm?cm 的两英寸半绝缘SiC单晶。二次离子质谱（SIMS）测量了晶体中的杂质（例如B、Al、V、N）浓度。结果表明在生长过程中，N和Al的浓度不断降低，B和V浓度基本保持不变。通过一个内部坩埚来控制V的耗尽，通过此方法使整个晶体的80％电阻率大于106 ohm cm。并且在半绝缘6H－SiC衬底上生长出了高性能的AlGaN/GaN HEMT材料和器件。室温下的二维电子气迁移率达到1795cm2/Vs。通过电容-电压测试得到衬底的载流子浓度为7.3×1015 cm-3。 栅宽1mm器件在8GHz下最大输出功率达到5.5W。器件的结果间接证明了衬底的半绝缘特性。

关键词: 碳化硅, 半绝缘, 钒掺杂, AlGaN/GaN HEMT

Abstract:

Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1×106 ­Ωcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry (SIMS) was employed to determine the concen- tration of impurities in the crystals, such as B, Al, V and N. These results indicated that the concentration of nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity of the high resistivity (>1×106 ­Ωcm) in the wafer up to 80%. High-performance AlGaN/GaN high-electron- mobility-transistor (HEMT) materials and devices were grown and fabricated on semi-insulating 6H-SiC sub- strates. The two-dimensional electron gas (2DEG) mobility at room-temperature was 1795 cm2/V•s. The charge carrier concentration of the substrate determined by capacitance-voltage (C-V) test was 7.3×1015 Ωcm−3. The device with a gate width of 1 mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves the semi-insulating property of the substrates indirectly.

Key words: Silicon Carbide, Semi-insulating, Vanadium-doped, AlGaN/GaN HEMT

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