Fine Machining of Large-Diameter 6H-SiC Wafers

J. Mater. Sci. Technol. ›› 2006, Vol. 22 ›› Issue (05): 681-684.

Fine Machining of Large-Diameter 6H-SiC Wafers

陈秀芳

山东大学晶体研究所

收稿日期:2005-06-10 修回日期:2005-10-21 出版日期:2006-09-28 发布日期:2009-10-10

Fine machining of large-diameter 6H-SiC wafers

Xiufang CHEN, Juan LI, Deying MA, Xiaobo HU, Xiangang XU, Minhua JIANG

State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2005-06-10 Revised:2005-10-21 Online:2006-09-28 Published:2009-10-10
Contact: Xiangang XU

摘要/Abstract

关键词: 6H-SiC, MP, CMP, roughness

Abstract: Three main machining processes of large-diameter 6H-SiC wafers were introduced in this paper. These processes include cutting, lapping and polishing. Lapping causes great residual stresses and deep damage layer which can be reduced gradually with subsequent polishing processes. Surfaces prepared by mechanical polishing (MP) appeared a large number of scratches with depth of 5~8 nm. These scratches can be effectively removed by chemo-mechanical polishing (CMP). After CMP, extremely smooth and low damage layer surface with roughness Ra=0.3 nm was obtained. Atomic force microscopy (AFM) and optical microscopy were used to observe the surface morphology of samples and a high resolution X-ray diffractometer (HRXRD) was used for the crystal lattice perfection of the subsurface region. Changes of surface residual stresses during machining processes were investigated by HRXRD.

Key words: 6H-SiC, Chemo-mechanical polishing (CMP), Roughness

陈秀芳. Fine Machining of Large-Diameter 6H-SiC Wafers[J]. J. Mater. Sci. Technol., 2006, 22(05): 681-684.

Xiufang CHEN, Juan LI, Deying MA, Xiaobo HU, Xiangang XU, Minhua JIANG. Fine machining of large-diameter 6H-SiC wafers[J]. J Mater Sci Technol, 2006, 22(05): 681-684.

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Fine Machining of Large-Diameter 6H-SiC Wafers

Fine machining of large-diameter 6H-SiC wafers

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