Abstract: A novel design of crucible is proposed in this paper for the growth of SiC crystals. The relation between grown crystal shape and temperature distribution in a growth chamber was discussed. It is pointed out that the crystal shape had a close relationship with temperature distribution. The calculations suggested that the radial temperature field of the growing crystal became homogenous by setting up the cone-shaped baffle in the growth chamber. By modifying the crucible design and temperature distribution in the growth chamber, it is possible to enhance the enlargement of crystal, and also possible to keep grown surface flat.

Key words: 6H-SiC, Sublimation method, Simulation, Temperature distribution