Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

J. Mater. Sci. Technol. ›› 2006, Vol. 22 ›› Issue (03): 342-344.

Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

陈秀华

云南大学化学与材料工程学院材料系650091

收稿日期:2005-01-11 修回日期:2005-08-12 出版日期:2006-05-28 发布日期:2009-10-10
通讯作者: 陈秀华

Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

Xiuhua CHEN, Xinghui WU, Jinzhong XIANG, Zhenlai ZHOU, Heyun ZHAO, Liqiang CHEN

Department of Materials Science and Engineering, Yunnan University, Kunming 650091, China

Received:2005-01-11 Revised:2005-08-12 Online:2006-05-28 Published:2009-10-10
Contact: Xiuhua CHEN

摘要/Abstract

Abstract: Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations (ULSIs) was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy (XPS) depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.

Key words: Cu diffusion, Sputtering method, Co/Cu/TiN film, Metallization

陈秀华. Cu Diffusion in Co/Cu/TiN Films for Cu Metallization[J]. J. Mater. Sci. Technol., 2006, 22(03): 342-344.

Xiuhua CHEN, Xinghui WU, Jinzhong XIANG, Zhenlai ZHOU, Heyun ZHAO, Liqiang CHEN. Cu Diffusion in Co/Cu/TiN Films for Cu Metallization[J]. J Mater Sci Technol, 2006, 22(03): 342-344.

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Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

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