Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks

doi:10.1016/j.jmst.2018.11.003

摘要/Abstract

Abstract:

In this work, the effects of atomic-layer-deposited (ALD) Al₂O₃ passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si substrates have been investigated. The results of electrical measurements and X-ray photoelectron sepectroscopy (XPS) showed that 1-nm-thick Al₂O₃ passivation layer is optimized to obtain excellent electrical and interfacial properties for HfYO/Si gate stack. Then, the metal-oxide-semiconductor capacitors with HfYO/1-nm Al₂O₃/Si/Al gate stack were fabricated and annealed at different temperatures in forming gas (95% N₂+5% H₂). Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics showed that the 250°C-annealed HYO high-k gate dielectric thin film demonstrated the lowest border trapped oxide charge density (-3.3×10¹⁰cm^-2), smallest gate-leakage current (2.45×10^-6 A/cm² at 2V) compared with other samples. Moreover, the annealing temperature dependent leakage current conduction mechanism for Al/HfYO/Al₂O₃/Si/Al MOS capacitor has been investigated systematically. Detailed electrical measurements reveal that Poole-Frenkle emission is the main dominant emission in the region of low and medium electric fields while direct tunneling is dominant conduction mechanism at high electric fields.

Key words: Al₂O₃passivation layer, Co-sputtering HYO films, Annealing, Electrical properties, Conduction mechanism

. [J]. 材料科学与技术, 2019, 35(5): 769-776.

Shuang Liang, Gang He, Die Wang, Fen Qiao. Atomic-layer-deposited (ALD) Al₂O₃ passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks[J]. J. Mater. Sci. Technol., 2019, 35(5): 769-776.

图/表 17

Fig. 1 Capacitance-voltage (C-V) characteristics of the HfYO/Al2O3/Si gate stacks as a function of Al2O3 thickness.

Table 1 Parameters of the HffYO/Al2O3/Si gate stacks with different Al2O3 thickness extracted from C-V and J-V curves.

Sample	t (nm)	C_ox (pF)	K	J (A/cm²)
HYO-as-dep	17.65	161	12	5.40?×?10^-5
HYO-0.5?nm Al₂O₃	17.40	193	14.7	2.01?×?10^-5
HYO-1?nm Al₂O₃	18.32	159	12.3	3.97?×?10^-6
HYO-2?nm Al₂O₃	18.43	126	9.5	7.50?×?10^-6
HYO-3?nm Al₂O₃	18.39	133	10.0	1.41?×?10^-5

Fig. 2 Leakage current density vs gate voltage (J-V) characteristics for the HfYO/Al2O3/Si gate stacks as a function of Al2O3 thickness.

Fig. 3 Wide survey XPS spectra of the HfYO/Al2O3/Si gate stacks with different Al2O3 thickness.

Fig. 4 Si 2p XPS spectra of the HfYO/Al2O3/Si gate stacks with different Al2O3 thickness.

Fig. 5 O 1s XPS spectra of the HfYO/Al2O3/Si gate stacks with different Al2O3 thickness.

Fig. 6 Al 2p XPS spectra of the HfYO/Al2O3/Si gate stacks with different Al2O3 thickness.

Fig. 7 Hf 4f XPS spectra of the HfYO/Al2O3/Si gate stacks with different Al2O3 thickness.

Fig. 8 Y 3d XPS spectra of the HfYO/Al2O3/Si gate stacks with different Al2O3 thickness.

Fig. 9 VB spectra of the Si substrate, the HfYO/Al2O3/Si gate stacks with different Al2O3 thickness.

Fig. 10 UV-vis absorption spectra of the HfYO film.

Fig. 11 Schematic band diagram of the HfYO films with different Al2O3 thickness.

Fig. 12 Capacitance-voltage (C-V) characteristics of the Al/HfYO/1-nm-thick Al2O3/Si stacks annealed at different temperatures.

Table 2 Parameters of the Al/HfYO/1-nm-thick Al2O3/Si MOS capacitors at different temperatures extracted from C-V and J-V curves.

Sample	t (nm)	C_ox (pF)	K	C_fb (pF)	V_fb (V)	ΔV_fb (V)	Q_ox (cm^-2)	N_bt (cm^-2)	J (A/cm²)
HYO-as-dep	19.4	177	14.77	48.63	0.21	0.09	-2.11?×?10²³	-3.17?×?10²³	8.40?×?10^-6
HYO-200?°C	19.4	155	12.63	47.69	0.96	0.02	3.09?×?10²²	-6.17?×?10²²	3.37?×?10^-5
HYO-250?°C	19.4	166	13.68	48.26	0.33	0.01	6.61?×?10²²	-3.30?×?10²²	2.45?×?10^-6
HYO-300?°C	19.4	188	15.06	48.78	0.39	0.13	-3.58?×?10²³	-4.66?×?10²³	1.75?×?10^-4

Fig. 13 C-V characteristics measured at different frequencies ranging from 0.5 MHZ to 1MHZ for the Al/HfYO/1-nm-thick Al2O3/Si stacks annealed at different temperatures.

Fig. 14 Leakage current density vs gate voltage (J-V) characteristics for the Al/HfYO/1-nm-thick Al2O3/Si stacks annealed at different temperatures.

Fig. 15 Schottky emission (SE), P-F emission and direct tunneling plots for the Al/HfYO/1-nm-thick Al2O3/Si stacks annealed at different temperatures for gate injection.

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Atomic-layer-deposited (ALD) Al₂O₃ passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks

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