J. Mater. Sci. Technol. ›› 2011, Vol. 27 ›› Issue (5): 465-470.

• Reviews • 上一篇    下一篇

Far Infrared Optical Properties of Bulk Wurtzite Zinc Oxide Semiconductor

Ooi Poh Kok   

  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang, Malaysia
  • 收稿日期:2010-09-03 修回日期:2011-02-18 出版日期:2011-05-28 发布日期:2011-05-28
  • 通讯作者: Ooi Poh Kok

Far Infrared Optical Properties of Bulk Wurtzite Zinc Oxide Semiconductor

Pohkok Ooi, Saicheong Lee, Shashiong Ng, Zainuriah Hassan, Haslan Abu Hassan   

  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang, Malaysia
  • Received:2010-09-03 Revised:2011-02-18 Online:2011-05-28 Published:2011-05-28
  • Contact: Pohkok Ooi
  • Supported by:

    the Ministry of Higher Education Malaysia Fundamental Research Grant Scheme (FRGS, Grant No. 203/PFIZIK/6711127)

Abstract: Polarized far infrared (FIR) reflectance technique was applied to study the optical properties of a bulk wurtzite zinc oxide (ZnO) single crystal. Room temperature polarized FIR reflectance spectra were taken at various angles of incidence, from 20° to 70°. The theoretical polarized FIR reflectance spectra were simulated based on the anisotropic dielectric function model. Good agreement was achieved between the experimental and the theoretical FIR reflectance spectra. Through this work, a complete set of reststrahlen parameters of a bulk wurtzite ZnO at the Brillouin zone centre was obtained. Additionally, other FIR optical properties such as the real and the imaginary parts of the complex dielectric function, real and imaginary parts of the refractive index, the absorption coefficient and the reciprocal of the absorption coefficient were also obtained by using numerical calculation.

Key words: Zinc oxide, Far infrared, Polarization, Infrared reflectance