J. Mater. Sci. Technol. ›› 2011, Vol. 27 ›› Issue (5): 403-407.

• Reviews • 上一篇    下一篇

Structure, optical property and thermal stability of copper nitride films prepared by reactive radio frequency magnetron sputtering

肖剑荣   

  1. 桂林理工大学
  • 收稿日期:2010-12-29 修回日期:2011-02-27 出版日期:2011-05-28 发布日期:2011-05-28
  • 通讯作者: 肖剑荣
  • 基金资助:

    氟化类金刚石薄膜组分与表面形貌的调控及其疏水机理研究;GaN薄膜的生长与位错形成机理研究

Structure, Optical Property and Thermal Stability of Copper Nitride Films Prepared by Reactive Radio Frequency Magnetron Sputtering

Jianrong Xiao1), Yanwei Li2), Aihua Jiang1)   

  1. 1) College of Science, Guilin University of Technology, Guilin 541004, China
    2) College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, China
  • Received:2010-12-29 Revised:2011-02-27 Online:2011-05-28 Published:2011-05-28
  • Contact: Jianrong Xiao
  • Supported by:

    the National Natural Science Foundation of China (Garnt No. 11064003) and the Guangxi Natural Science Foundation of China (2010GXNSFA013122)

RichHTML

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摘要： Copper nitride (Cu3N) films were prepared by reactive radio frequency magnetron sputtering at various nitrogen partial pressures, and the films were annealed at different temperature. The crystal structure of the films was identified by X-ray diffraction technique. The Cu3N films has a cubic anti-ReO3 structure, and lattice constant is 0.3855nm. With the increase of nitrogen partial pressure, the Cu3N films are strongly textured with the crystal direction (100). The atomic force microscope images show that the films presence a smooth and compact morphology with nanocrystallites of about 70nm in size. The films was further characterized by UV-visible spectrometer, and the optical band gap of the films was calculated from the Tauc equation. The typical value of optical band gap of the films is about 1.75eV, and it increases with the increasing nitrogen partial pressure. The thermal property of the films was measured by a thermogravimetry, and the decomposition temperature of the films was about 530K.

Abstract: Copper nitride (Cu3N) films were prepared by reactive radio frequency magnetron sputtering at various nitrogen partial pressures, and the films were annealed at different temperatures. The crystal structure of the films was identified by X-ray diffraction technique. The Cu3N films have a cubic anti-ReO3 structure, and lattice constant is 0.3855 nm. With increasing nitrogen partial pressure, the Cu3N films are strongly textured with the crystal direction [100]. The atomic force microscope images show that the films presence a smooth and compact morphology with nanocrystallites of about 70 nm in size. The films were further characterized by UV-visible spectrometer, and the optical band gap of the films was calculated from the Tauc equation. The typical value of optical band gap of the films is about 1.75 eV, and it increases with increasing nitrogen partial pressure. The thermal property of the films was measured by thermogravimetry, and the decomposition temperature of the films was about 530 K.

Key words: Cu3N films, X-ray diffraction, Structure, Optical property, Decomposition
temperature

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