J. Mater. Sci. Technol. ›› 2010, Vol. 26 ›› Issue (8): 673-678.

• Research Articles •    下一篇

Influence of Sputtering Pressure on the Structural and Mechanical Properties of nanocomposite Ti-Si-N thin films

VipinChawla1,JAYAGANTHANR2,RameshChandra2   

  1. 1. IIT Roorkee
    2. INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
  • 收稿日期:2009-06-25 修回日期:2010-03-11 出版日期:2010-08-28 发布日期:2010-08-23
  • 通讯作者: JAYAGANTHANR

Influence of Sputtering Pressure on the Structure and Mechanical Properties of Nanocomposite Ti-Si-N Thin Films

Vipin Chawla, R. Jayaganthan, Ramesh Chandra   

  1. 1) Department of Metallurgical and Materials Engineering & Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India
    2) Nano Science Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667, India
  • Received:2009-06-25 Revised:2010-03-11 Online:2010-08-28 Published:2010-08-23
  • Contact: JAYAGANTHAN R

摘要:

The influence of deposition parameters on the structure and mechanical properties of sputter deposited nanocomposite Ti-Si-N films was investigated. XRD analysis of the thin films exhibit all (111), (200) & (220) peaks initially with varying sputtering pressure but (111) peak dominates at higher sputtering pressure. Microstructural analysis revealed that the dense blurred grains transform into uniform grains in the films and showed porosity with increasing sputtering pressure. The hardness and Young’s modulus values of Ti-Si-N films are 33.7 GPa and 278.6 GPa, respectively, with 5 mTorr sputtering pressure but it decreases with increase in sputtering pressure due to porosity of the films.

Abstract:

Nanocomposite Ti-Si-N thin films have been deposited on Si (100) substrate by direct current/radio frequency (DC/RF) magnetron sputtering. The effect of varying deposition parameters on the structure and mechanical properties of Ti-Si-N films has been investigated by characterization techniques such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and nanoindentation, respectively. XRD analysis of the thin films exhibit all (111), (200) and (220) peaks initially with varying sputtering pressure, but (111) peak dominates at higher sputtering pressure. The crystallite size calculated from XRD peaks shows that it increases with increasing sputtering pressure. Microstructural analysis reveals that the dense blurred grains transform into uniform grains in the films and shows porosity with increasing sputtering pressure. The surface roughness of the Ti-Si-N films increases with varying sputtering pressure. The hardness and Young0s modulus values of Ti-Si-N films are 33.7 and 278.6 GPa, respectively, with 0.7 Pa sputtering pressure but it decreases with further increase in sputtering pressure due to an increase in porosity of the films.

Key words: Ti-Si-N films, Nanoindentation, Microstructural characterization