J. Mater. Sci. Technol. ›› 2010, Vol. 26 ›› Issue (11): 1041-1046.

所属专题： 光电材料专辑

• Research Articles • 上一篇    下一篇

The factors affect the growth of SiC nano-whiskers

陈一峰1,刘兴钊2,邓新武2,李言荣3   

  1. 1. 电子科技大学微电子与固体电子学院
    2. 电子薄膜与集成器件国家重点实验室
    3. 电子科技大学
  • 收稿日期:2009-10-23 修回日期:2010-03-25 出版日期:2010-11-30 发布日期:2010-11-22
  • 通讯作者: 陈一峰

Factors Affecting the Growth of SiC Nano-whiskers

Y.F. Chen, X.Z. Liu, X.W. Deng   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2009-10-23 Revised:2010-03-25 Online:2010-11-30 Published:2010-11-22
  • Contact: X.Z. Liu

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关键词: 碳化硅, 纳米晶须, 气-液-固生长机理

Abstract: Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently developed for high-temperature, high-power, and high-radiation conditions, in which conventional semiconductors cannot be adequately performed. In this paper, SiH4 and C2H2 were used to synthesize SiC nano-whiskers. Metal Ni was the catalyst. SiC nano-whiskers were grown by vapor-liquid-solid mechanism. The effects of the H2 flow rate, growth temperature, catalyst thickness and growth pressure to grow SiC nano-whiskers were studied. 3C-SiC thin film and nano-tips can be synthesized by controlling the growth conditions.

Key words: SiC, Nano-whisker, Vapor-liquid-solid