J. Mater. Sci. Technol. ›› 1993, Vol. 9 ›› Issue (2): 133-135.

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H-plasma In-situ Cleaning and Lattice Damage Elimination

Chenguang GONG+;Fuchu SHEN;Biguang YE;Jian CHEN, Zhenjiang University, Hangzhou, 310027, China   

  • 收稿日期:1993-03-28 修回日期:1993-03-28 出版日期:1993-03-28 发布日期:2009-10-10

H-plasma In-situ Cleaning and Lattice Damage Elimination

Chenguang GONG+;Fuchu SHEN;Biguang YE;Jian CHEN, Zhenjiang University, Hangzhou, 310027, China   

  • Received:1993-03-28 Revised:1993-03-28 Online:1993-03-28 Published:2009-10-10

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摘要： <正> This article discusses the silicon lattice damage induced during H-plasma in-situ cleaning and findsthat the substrate temperature, plasma power, processing time, all affect the extent of the distortion ofthe surface and its curability.

Abstract: This article discusses the silicon lattice damage induced during H-plasma in-situ cleaning and finds that the substrate temperature, plasma power, processing time, all affect the extent of the distortion of the surface and its curability.

Key words: H-plasma cleaning, lattice damage, epitaxial, Si film