J. Mater. Sci. Technol. ›› 1997, Vol. 13 ›› Issue (2): 145-148.

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X-ray Powder Diffraction Pattern of Bi_4(SiO_4)_3

Hongchao LIU ; Changlin KUO (Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China)   

  • 收稿日期:1997-03-28 修回日期:1997-03-28 出版日期:1997-03-28 发布日期:2009-10-10

X-ray Powder Diffraction Pattern of Bi_4(SiO_4)_3

Hongchao LIU ; Changlin KUO (Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China)   

  • Received:1997-03-28 Revised:1997-03-28 Online:1997-03-28 Published:2009-10-10

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摘要： 1.IntroductionAccurateintensitydataarebecondngmoreandmoreAnp0rtatinmodernpowderchactionanal-ysis.TwofieldsofX-raypowderchactionreceiv-ingconsiderableattelitioninrecentyearsarequan-titativeanalysisandfuetveldanalysisbasedonthefulldchactionpattern.Theyneedaccuratedeter-nilnationofintensitydata.Inqualitativeanalysisofcomplexsystem,onecandeterndnethephasesfastandcorrectlywithaccurateintensitydata....

Abstract: In cooperation with figure-of-merits the Rietveld analysis can appraise both angular and intensity data of powder diffraction. In this work, X-ray diffraction pattern of Bi4(SiO4)3 was redetermined with intensity figure-of-merits, which qualify agreement between observed and calculated relative intensities. F30 is 158.90 (0.0059, 32), intensity figure of merit Rint is 8.7, I20(17), 8.0. The values of figure-of-merits show that the data of JCPDS cards are distorted. Both the experimental and calculated peak positions and heights are listed in detail.