锘�
J. Mater. Sci. Technol. 2006, 22(01) 1-18  DOI:      ISSN: 1005-0302 CN: 21-1315/TG

Current Issue | Archive | Search                                                            [Print]   [Close]
Research Articles
Information and Service
This Article
Supporting info
PDF(10236KB)
[HTML]
Reference
Service and feedback
Email this article to a colleague
Add to Bookshelf
Add to Citation Manager
Cite This Article
Email Alert
Keywords
Controlled growth
One-dimensional
Oxide
Nanomaterials
Authors
Xiaosheng FANG
Lide ZHANG
PubMed
Article by
Article by
Article by

Controlled Growth of One-Dimensional Oxide Nanomaterials

Xiaosheng FANG, Lide ZHANG

Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, China

Abstract

This article reviews the recent developments in the controlled growth of one-dimensional (1D) oxide nanomaterials, including ZnO, SnO2, In2O3, Ga2O3, SiOx, MgO, and Al2O3. The growth of 1D oxide nanomaterials was carried out in a simple chemical vapor transport and condensation system. This article will begin with a survey of nanotechnology and 1D nanomaterials achieved by many researchers, and then mainly discuss on the controlled growth of 1D oxide nanomaterials with their morphologies, sizes, compositions, and microstructures controlled by altering experimental parameters, such as the temperature at the source material and the substrate, temperature gradient in the tube furnace, the total reaction time, the heating rate of the furnace, the gas flow rate, and the starting material. Their roles in the formation of various morphologies are analyzed and discussed. Finally, this review will be concluded with personal perspectives on the future research directions of this area.

Keywords Controlled growth   One-dimensional   Oxide   Nanomaterials   
Received 2005-11-14 Revised 1900-01-01 Online: 2009-10-10 
DOI:
Fund:
Corresponding Authors: Lide ZHANG
Email: ldzhang@issp.ac.cn
About author:

References:
[1]Z.L.Wang: Nanowires and Nanobelts,Vol I,Kluwer Academic,New York,2003,3.
[2] P.D.Yang,Y.Y.Wu and R.Fan: Inter.J.Nanosci, 2002, 1, 1.
[3] S.Iijima: Nature, 1991, 354, 56.
[4] J.T.Hu,J.T.W.Odom and C.M.Lieber: Acc.Chem. Res, 1999, 32, 435.
[5] Z.R.Dai,Z.W.Pan and Z.L.Wang: Adv.Funct. Mater, 2003, 13, 9.
[6] M.Law,J.Goldberger and P.D.Yang: Annu.Rev. Mater.Res, 2004, 34, 83.
[7]L.Miao,S.Tanemura,S.Toh,K.Kaneko and M.Tanemura: J.Mater.Sci.Technol,2004,20, 59.
[8] L.Li,Y.Zhang,Y.W.Yang,X.H.Huang,G.H.Li and L.D.Zhang: Appl.Phys.Lett, 2005, 87, 031912.
[9] G.M.Whitesides: Small, 2005, 1, 172.
[10] X.S.Fang,C.H.Ye,L.D.Zhang and T.Xie: Adv. Mater, 2005, 17, 1661.
[11] Y.N.Xia,P.D.Yang,Y.G.Sun,Y.Y.Wu,B.Mayers, B.Gates,Y.D.Yin,F.Kim and H.Q.Yan: Adv.Mater, 2003, 15, 353.
[12] P.M.Ajayan: Chem.Rev, 1999, 99, 1787.
[13] C.H.Ye,G.W.Meng,Z.Jiang,Y.H.Wang,G.Z.Wang and L.D.Zhang: J.Am.Chem.Soc, 2002, 124, 15180.
[14] G.S.Wu,L.D.Zhang,B.C.Cheng,T.Xie and X.Y.Yuan: J.Am.Chem.Soc, 2004, 126, 5976.
[15]J.ZHANG,Z.Q.LI and J.XU: J.Mater,Sci.Technol, 2005,21,128.
[16] S.H.Yu,B.Liu,M.S.Mo,J.H.Huang,X.M.Liu and Y.T.Qian: Adv.Funct.Mater, 2003, 13, 639.
[17]H.L.ZHU,D.R.YANG and H.ZHANG: J.Mater.Sci. Technol.,2005,21,609.
[18] A.M.Morales and C.M.Lieber: Science, 1998, 279, 208.
[19] X.Y.Zhang,L.D.Zhang,G.W.Meng,G.H.Li,N.Y.Jin- Phillipp and F.Phillipp: Adv.Mater, 2001, 13, 1238.
[20]B.S.Xu,P.D.Han,J.Liang,Y.Yi,H.Q.Bao and X.G.Liu: J.Mater.Sci.Technol,2004,20,681.
[21] Z.W.Pan,Z.R.Dai and Z.L.Wang: Science, 2001, 291, 1947.
[22]Y.W.Wang,L.D.Zhang,G.W.Meng,C.H.Liang, G.Z.Wang and S.H.Sun: Chem.Comm.,2001,2632.
[23]J.S.Wang,J.Q.Sun,Y.Bao and X.F.Bian: J.Mater. Sci.Technol.,2003,19,489.
[24] Y.Zhang,K.Suenaga,C.Colliex and S.Iijima: Science, 1998, 281, 973.
[25] G.W.Meng,L.D.Zhang,C.M.Mo,S.Y.Zhang,Y.Qin, S.P.Feng and H.J.Li: J.Mater.Res, 1998, 13, 2533.
[26]Q.Li,L.Z.Yao,G.W.Jiang,C.G.Jin,W.F.Liu, W.L.Cai and Z.Yao: J.Mater.Sci.Technol.,2004, 20,684.
[27] Y.Li,C.H.Ye,X.S.Fang,L.Yang,Y.H.Xiao and L.D.Zhang: Nanotech, 2005, 16, 501.
[28] S.H.Yu and M.Yoshimura: Adv.Mater, 2002, 14, 296.
[29] X.S.Fang,C.H.Ye,X.S.Peng,Y.H.Wang,Y.C.Wu and L.D.Zhang: J.Cryst.Growth, 2004, 263, 263.
[30] B.Q.Cao,W.P.Cai,Y.Li,F.Q.Sun and L.D.Zhang: Nanotech, 2005, 16, 1734.
[31] C.R.Martin: Science, 1994, 266, 1961.
[32] H.Masuda and K.Fukuda: Science, 1995, 268, 1466.
[33] L.Li,Y.Zhang,G.H.Li and L.D.Zhang: Chem.Phys. Lett, 2003, 378, 244.
[34] L.Li,Y.H.Xiao,Y.W.Yang,X.H.Huang,G.H.Li and L.D.Zhang: Chem.Lett, 2005, 34, 930.
[35]M.Z.Wu,L.Z.Yao,W.L.Cai,G.W.Jiang,X.G.Li and Z.Yao: J.Mater.Sci.Technol.,2004,20,11.
[36] J.D.Holmes,K.P.Johnston,R.C.Doty and B.A.Korgel: Science, 2000, 287, 1471.
[37] Y.D.Li,H.W.Liao,Y.Ding,Y.T.Qian,L.Yang and G.E.Zhou: Chem.Mater, 1998, 10, 2301.
[38] Y.G.Sun and Y.N.Xia: Science, 2002, 298, 2176.
[39] W.T.Yao,S.H.Yu,L.Pan,J.Li,Q.S.Wu,L.Zhang and H.Jiang: Small, 2005, 1, 320.
[40] X.Wang,J.Zhuang,Q.Peng and Y.D.Li: Nature, 2005, 437, 121.
[41] R.S.Wagner and W.C.Ellis: Appl Phys.Lett, 1964, 4, 89.
[42] Y.Cui,L.J.Lauhon,M.S.Gudiksen,J.F.Wang and C.M.Lieber: Appl.Phys.Lett, 2001, 78, 2214.
[43] P.D.Yang and C.M.Lieber: J.Mater.Res, 1997, 12, 2981.
[44] X.S.Fang,C.H.Ye,L.D.Zhang,Y.Li and Z.D.Xiao: Chem.Lett, 2005, 34, 436.
[45] Y.W.Wang,L.D.Zhang,C.H.Liang,G.W.Wang and X.S.Peng: Chem.Phys.Lett, 2002, 357, 314.
[46] R.Q.Zhang,Y.Lifshitz and S.T.Lee: Adv.Mater, 2003, 15, 635.
[47] G.S.Cheng,L.D.Zhang,Y.Zhu,G.T.Fei,L.Li,C.M.Mo and Y.Q.Mao: Appl.Phys.Lett, 1999, 75, 2455.
[48] C.H.Liu,J.A.Zapien,Y.Yao,X.Meng,C.S.Lee, S.S.Fan,Y.Lifshitz and S.T.Lee: Adv.Mater, 2003, 15, 838.
[49] Z.L.Wang: Annu.Rev.Phys.Chem, 2004, 55, 159.
[50] C.N.R.Rao,F.L.Deepak,G.Gundiah and A.Govindaraj: Prog.Solid State Chem, 2003, 31, 5.
[51] A.I.Hochbaum,R.Fan,R.R.He and P.D.Yang: Nano. Lett, 2005, 5, 457.
[52] S.P.Ge,K.L.Jiang,X.X.Lu,Y.F.Chen,R.M.Wang and S.S.Fan: Adv.Mater, 2005, 17, 56.
[53] G.Kipshidze,B.Yavich,A.Chandolu,J.Yun, V.Kuryatkov,I.Ahmad,D.Aurongzeb,M.Holtz and H.Temkin: Appl.Phys.Lett, 2005, 86, 033104.
[54] T.H.Yang,C.H.Chen,A.Chatterjee,H.Y.Li,J.T.Lo, C.T.Wu,K.H.Chen and L.C.Chen: Chem.Phys. Lett, 2003, 379, 155.
[55] X.S.Fang,C.H.Ye,X.S.Peng,Y.H.Wang,Y.C.Wu and L.D.Zhang: Adv.Funct.Mater, 2005, 15, 63.
[56] C.H.Ye,G.W.Meng,Y.H.Wang,Z.Jiang and L.D.Zhang: J.Phys.Chem.B, 2002, 106, 10338.
[57] C.L.Cheung,A.K.Kurtz,H.K.Park and C.M.Lieber: J.Phys.Chem.B, 2002, 106, 2429.
[58]Z.L.Wang: J.Phys.; Condens.Matter.,2004,16, R829.
[59] Y.Li,G.W.Meng,L.D.Zhang and F.Phillipp: Appl. Phys.Lett, 2000, 76, 2011.
[60] M.H.Huang,S.Mao,H.Feick,H.Q.Yan,Y.Y.Wu, H.King,E.Weber,R.Russo and Y.P.Yang: Science, 2001, 292, 1897.
[61]Y.W.Wang,L.D.Zhang,G.Z.Wang,X.S.Peng, Z.Q.Chu and C.H.Liang: J.Cryst.Growth,2001, 234,171.
[62] P.D.Yang,H.Q.Yan,S.Mao,R.Russo,J.Johnson, R.Saykally,N.Morris,J.Pham,R.He and H.J.Choi: Adv.Funct.Mater, 2002, 12, 323.
[63] M.J.Zheng,L.D.Zhang,G.H.Li and W.Z.Shen: Chem. Phys.Lett, 2002, 363, 123.
[64] L.Vayssieres: Adv.Mater, 2003, 15, 464.
[65] X.Y.Kong,Y.Ding,R.Yang and Z.L.Wang: Science, 2004, 303, 1348.
[66] P.M.Gao,Y.Ding,W.J.Mai,W.L.Hughes,C.S.Lao and Z.L.Wang: Science, 2005, 309, 1700.
[67] P.M.Gao and Z.L.Wang: Small, 2005, 1, 945.
[68] G.S.Wu,X.Y.Yuan,Y.Li,L.Yang,Y.H.Xiao and L.D.Zhang: Solid State Comm, 2005, 134, 485.
[69] Q.Wei,G.W.Meng,X.H.An,Y.F.Hao and L.D.Zhang: Nanotech, 2005, 16, 2561.
[70]Y.H.Xiao,L.Li,Y.Li,M.Fang and L.D.Zhang: Nan- otech.,2005,16,671.
[71] C.H.Ye,X.S.Fang,Y.F.Hao,X.M.Teng and L.D.Zhang: J.Phys.Chem.B, 2005, 109, 19758.
[72] C.Herring: Phys.Rev, 1951, 82, 87.
[73] E.Kaldis: J.Cryst.Growth, 1969, 5, 376.
[74] W.L.Hughes and Z.L.Wang: Appl.Phys.Lett, 2005, 86, 043106.
[75] X.H.Han,G.Z.Wang,J.S.Jie,W.C.H.Choy,Y.Luo, T.I.Yuk and J.G.Hou: J.Phys.Chem.B, 2005, 109, 2733.
[76] B.C.Cheng,Y.H.Xiao,G.S.Wu and L.D.Zhang: Adv. Funct.Mater, 2004, 14, 913.
[77] B.C.Cheng,Y.H.Xiao,G.S.Wu and L.D.Zhang: Appl. Phys.Lett, 2004, 84, 416.
[78] A.Aoki and H.Sasakura: Jpn.J.Appl.Phys, 1970, 9, 582.
[79] C.Tatsuyama and S.Ichimura: Jpn.J.Appl.Phys, 1976, 15, 843.
[80] M.Law,H.Kind,B.Messer,F.Kim and P.D.Yang: Angew.Chem.Int.End, 2002, 41, 2405.
[81] A.Kolmakov,Y.X.Zhang,G.S.Cheng and M.Moskovits: Adv.Mater, 2003, 15, 997.
[82] Z.R.Dai,Z.W.Pan and Z.L.Wang: Solid State Comm, 2001, 118, 351.
[83] M.J.Zheng,G.H.Li,X.Y.Zhang,S.Y.Huang,Y.Lei and L.D.Zhang: Chem.Mater, 2001, 13, 3859.
[84] J.Q.Hu,X.L.Ma,N.G.Shang,Z.Y.Xie,N.B.Wong, C.S.Lee and S.T.Lee: J.Phys.Chem.B, 2002, 106, 3823.
[85] X.S.Peng,L.D.Zhang,G.W.Meng,Y.T.Tian,Y.Lin, B.Y.Geng and S.H.Sun: J.Appl.Phys, 2003, 93, 1760.
[86] S.H.Sun,G.W.Meng,Y.W.Wang,T.Gao,M.G.Zhang, Y.T.Tian,X.S.Peng and L.D.Zhang: Appl.Phys.A, 2003, 76, 287.
[87] S.H.Sun,G.W.Meng,G.X.Zhang,T.Gao,B.Y.Geng, L.D.Zhang and J.Zuo: Chem.Phys.Lett, 2003, 376, 103.
[88] C.H.Ye,X.S.Fang,Y.H.Wang,T.Xie,A.W.Zhao and L.D.Zhang: Chem.Lett, 2004, 33, 54.
[89] S.H.Sun,G.W.Meng,M.G.Zhang,X.H.An,G.S.Wu and L.D.Zhang: J.Phys.D: Appl.Phys, 2004, 37, 409.
[90] Y.Wang,J.Y.Lee and T.C.Deivaraj: J.Phys.Chem. B, 2004, 108, 13589.
[91] L.S.Huang,L.Pu,Y.Shi,R.Zhang,B.X.Gu and Y.W.Du: Appl.Phys.Lett, 2005, 87, 163124.
[92] C.G.Granqvist: Appl.Phys.A, 1993, 57, 19.
[93]I.Hamburg and C.G.Granqvist: J.Appl.Phys.,1986, 60,R123.
[94] C.Li,D.H.Zhang,X.L.Liu,S.Han,T.Tang,J.Han and C.W.Zhou: Appl.Phys.Lett, 2003, 82, 1613.
[95] C.H.Liang,G.W.Meng,Y.Lei,F.Phillipp and L.D.Zhang: Adv.Mater, 2001, 13, 1330.
[96] M.J.Zheng,L.D.Zhang,G.H.Li,X.Y.Zhang and X.F.Wang: Appl.Phys.Lett, 2001, 79, 839.
[97] X.S.Peng,G.W.Meng,J.Zhang,X.F.Wang, Y.W.Wang,C.Z.Wang and L.D.Zhang: J.Mater. Chem, 2002, 12, 1602.
[98] Y.B.Li,Y.Bando and D.Golberg: Adv.Mater, 2003, 15, 581.
[99] X.Y.Kong and Z.L.Wang: Solid State Commun, 2003, 128, 1.
[100] Y.F.Hao,G.W.Meng,C.H.Ye and L.D.Zhang: Cryst. Growth Des, 2005, 5, 1617.
[101]G.W.Sears: Acta Met.,1955,4,361.
[102]G.W.Sears: Acta Met.,1955,4,367.
[103] C.Li,D.H.Zhang,S.Han,X.L.Liu,T.Tang and C.W.Zhou: Adv.Mater, 2003, 15, 143.
[104] Y.J.Zhang,H.Ago,J.Liu,M.Yumura,K.Uchida, S.Ohshima,S.Iijima,J.Zhu and X.Z.Zhang: J.Cryst. Growth, 2004, 264, 363.
[105] Z.Li,C.de Groot and J.H.Moodera: Appl.Phys. Lett, 2000, 77, 3630.
[106] E.W.Wong,P.E.Sheehan and C.M.Lieber: Science, 1997, 277, 1971.
[107] L.Binet and D.Gourier: J.Phys.Chem.Solids, 1998, 59, 1241.
[108] T.Miyata,T.Nakatani and T.Minami: Thin Solid Films, 2000, 373, 145.
[109]C.Arnoult and X.Devaux: J.Mater.Sci.Technol., 2004, 20,63.
[110] J.H.Zhan,Y.Bando,J.Q.Hu,F.F.Xu and D.Golberg: Small, 2005, 1, 883.
[111] C.H.Liang,G.W.Meng,G.Z.Wang,Y.W.Wang, L.D.Zhang and S.Y.Zhang: Appl.Phys.Lett, 2001, 78, 3202.
[112]J.Y.Li,X.L.Chen,Z.Y.Qiao,M.He and H.Li: J.Phys.: Condens.Mater.,2001,13,L937.
[113] Z.R.Dai,Z.W.Pan and Z.L.Wang: J.Phys.Chem.B, 2002, 106, 902.
[114] Z.W.Pan,Z.R.Dai,L.Xu,S.T.Lee and Z.L.Wang: J. Phys.Chem.,B, 2001, 105, 2507.
[115] D.P.Yu,Q.L.Hang,Y.Ding,H.Z.Zhang,Z.G.Bai, J.J.Wang,Y.H.Zou,W.Qian,G.C.Xiong and S.Q.Feng: Appl.Phys.Lett, 1998, 73, 3076.
[116] C.H.Liang,L.D.Zhang,G.W.Meng,Y.W.Wang and Z.Q.Chu: J.Non-Cryst.Solid, 2000, 277, 63.
[117] B.Zheng,Y.Y.Wu,P.D.Yang and J.Liu: Adv.Mater, 2002, 14, 122.
[118] Y.W.Wang,C.H.Liang,G.W.Meng,X.S.Peng and L.D.Zhang: J.Mater.Chem, 2002, 12, 651.
[119] X.S.Peng,X.F.Wang,J.Zhang,Y.W.Wang,S.H.Sun, G.W.Meng and L.D.Zhang: Appl.Phys.A, 2002, 74, 831.
[120] G.W.Meng,X.S.Peng,Y.W.Wang,C.Z.Wang, X.F.Wang and L.D.Zhang: Appl.Phys.A, 2003, 76, 119.
[121] X.S.Fang,C.H.Ye,T.Xie,G.He,Y.H.Wang and L.D.Zhang: Appl.Phys.A, 2005, 80, 423.
[122] G.W.Meng,X.S.Peng,Y.W.Wang,C.Z.Wang, X.F.Wang and L.D.Zhang: Appl.Phys.A, 2003, 76, 119.
[123] Z.W.Pan,S.Dai,D.B.Beach and D.H.Lowndes: Nano. Lett, 2003, 3, 1279.
[124] P.D.Yang and C.M.Lieber: Science, 1996, 273, 1836.
[125] B.Q.Wei,R.Vajtai,Z.J.Zhang,G.Ramanath and P.M.Ajayan: J.Nanosci.Nanotech, 2001, 1, 35.
[126] J.Zhang,L.Zhang,X.Peng and X.Wang: Appl.Phys. A, 2001, 73, 773.
[127] Y.D.Yin,G.T.Zhang and Y.N.Xia: Adv.Funct. Mater, 2002, 12, 293.
[128] Y.Q.Zhu,Y.Z.Jin,H.W.Kroto and D.R.M.Walton: J. Mater.Chem, 2004, 14, 685.
[129] J.H.Zhan,Y.Bando,J.Q.Hu and D.Golberg: Inorg. Chem, 2004, 43, 2462.
[130] J.Zhang and L.D.Zhang: Chem.Phys.Lett, 2002, 363, 293.
[131] X.S.Fang,C.H.Ye,L.D.Zhang,J.X.Zhang,J.W.Zhao and P.Yan: Small, 2005, 1, 422.
[132] P.Yan,C.H.Ye,X.S.Fang,J.W.Zhao,Z.Y.Wang and L.D.Zhang: Chem.Lett, 2005, 34, 384.
[133] G.Das: Ceram.Eng.Sci.Proc, 1995, 16, 977.
[134] V.Valcarcel,A.Perez,M.Cyrklaff and F.Guitian: Adv. Mater, 1998, 10, 1370.
[135] Z.H.Yuan,H.Huang and S.S.Fan: Adv.Mater, 2002, 14, 303.
[136]Y.Pang,G.Meng,L.D.Zhang,W.Shan,C.Zhang, X.Gao,A.Zhao and Y.Mao: J.Solid State Elec- trochem.,2003,7,344.
[137] Y.T.Tian,G.W.Meng,T.Gao,S.H.Sun,T.Xie, X.S.Peng,C.H.Ye and L.D.Zhang: Nanotech, 2004, 15, 189.
[138] C.N.R.Rao,G.Gundiah,F.L.Deepak,A.Govindaraj and A.K.Cheetham: J.Mater.Chem, 2004, 14, 440.
[139] X.S.Fang,C.H.Ye,X.X.Xu,T.Xie,Y.C.Wu and L.D.Zhang: J.Phys.: Condens.Matter, 2004, 16, 4157.
[140] X.S.Fang,C.H.Ye,X.S.Peng,Y.H.Wang,Y.C.Wu and L.D.Zhang: J.Mater.Chem, 2003, 13, 3040.
[141] X.S.Peng,L.D.Zhang,G.W.Meng,X.F.Wang, Y.W.Wang,C.Z.Wang and G.S.Wu: J.Phys.Chem. B, 2002, 106, 11163.
[142]M.H.Cao,C.W.Hu,Y.H.Wang,Y.H.Guo,C.X.Guo and E.B.Wang: J.Am.Chem.Soc,2003,125,1884.
[143] M.H.Cao,C.W.Hu,G.Peng,Y.J.Qi and E.B.Wang: J. Am.Chem.Soc, 2003, 125, 4982.
[144] P.D.Cozzoli,A.Kornowski and H.Weller: J.Am. Chem.Soc, 2003, 125, 14539.
[145] T.Yu,Y.W.Zhu,X.J.Xu,Z.X.Shen,P.Chen,C.T.Lim, J.T.L.Thong and C.H.Sow: Adv.Mater, 2005, 17, 1595.
[146] X.G.Wen,S.H.Wang,Y.Ding,Z.L.Wang and S.H.Yang: J.Phys.Chem.B, 2005, 109, 215.
[147] J.K.Yuan,W.N.Li,S.Gomez and S.L.Suib: J.Am. Chem.Soc, 2005, 127, 14184.
[148] C.W.Sun,H.Li,H.R.Zhang,Z.X.Wang and L.Q.Chen: Nanotech, 2005, 16, 1454.
[149] J.Q.Hu,Y.Zhang,X.M.Meng,C.S.Lee and S.T.Lee: Small, 2005, 1, 429.
[150]J.T.Hu,M.Ouyang,P.D.Yang and C.M.Lieber: Na- ture,1999,399,48.
[151] L.J.Lauhon,M.S.Gudiksen,D.Wang and C.M.Lieber: Nature, 2002, 420, 57.
[152] Y.Huang,X.F.Duan and C.M.Lieber: Small, 2005, 1, 142.
[153] P.D.Yang: Nature, 2003, 425, 243.
[154] B.Y.Geng,G.Z.Wang,Z.Jiang,T.Xie,S.H.Sun, G.W.Meng and L.D.Zhang: Appl.Phys.Lett, 2003, 82, 4791.
[155] X.S.Fang,C.H.Ye,T.Xie,Z.Y.Wang,J.W.Zhao and L.D.Zhang: Appl.Phys.Lett, 2006, 88, 013101.
[156] C.Lopec: Small, 2005, 1, 378.
[157] C.H.Ye,X.S.Fang,G.H.Li and L.D.Zhang: Appl. Phys.Lett, 2004, 85, 3035.
[158] C.H.Ye,L.D.Zhang,X.S.Fang,Y.H.Wang,P.Yan and J.W.Zhao: Adv.Mater, 2004, 16, 1019.
[159] K.A.Dick,K.Deppert,M.W.Larsson,T.Martensson, W.Seifert,L.R.Wallenberg and L.Samuelson: Nat. Mater, 2004, 3, 380.
[160] M.Terrones: Small, 2005, 1, 1032.
Similar articles
1.Ting XIE, Min YE, Xiaosheng FANG, Zhi JIANG, Li CHEN, Mingguang KONG, Yucheng WU, Lide ZHANG.Morphology-Controlled Growth of AlN One-Dimensional Nanostructures[J]. J. Mater. Sci. Technol., 2008,24(04): 608-614

Copyright by J. Mater. Sci. Technol.