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J. Mater. Sci. Technol. 2010, 26(10) 872-877 DOI:     ISSN: 1005-0302 CN: 21-1315/TG

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Keywords
Al-doped zinc oxide
Mid-frequency magnetron sputtering
Properties
Authors
HONG Rui-Jiang
XU Shu-Hua
PubMed
Article by Hong,R.J
Article by Xu,S.H

ZnO:Al Films Prepared by Reactive Mid-frequency Magnetron Sputtering with Rotating Cathode

Ruijiang Hong, Shuhua Xu

1) School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
2) School of Science, South China University of Technology, Guangzhou 510641, China

Abstract

Al-doped zinc oxide (ZnO:Al, AZO) films were deposited on glass substrates using a reactive mid-frequency (MF) magnetron sputtering process with rotating cathodes. The influence of deposition parameters on structural, electrical and optical properties of AZO fims is investigated. It is observed that the rotating magnetron targets exhibited a sputtered metallic surface over a wider range, and there is no re-deposition zone between the racetracks. The films deposited at static deposition mode demonstrate more homogenous in thickness and resistivity across the target surface compared with conventional rectangular targets. The films deposited under the proper conditions show a regular cone-shaped grain surface and densely packed columnar structure. The minimum resistivity of 3.16×10-4­  Ω·m was obtained for the film prepared at substrate temperature of  150°C, gas pressure of 640 MPa and oxygen partial pressure of 34 MPa.

Keywords Al-doped zinc oxide   Mid-frequency magnetron sputtering   Properties  
Received 2010-01-26 Revised 2010-03-19 Online: 2010-10-29 
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Email: xushuhua@scut.edu.cn
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