J Mater Sci Technol ›› 1998, Vol. 14 ›› Issue (3): 269-272.

• Articles • Previous Articles     Next Articles

Reactive Magnetron Sputtering of CN_x Thin Films on β-Si_3N_4 Substrates

WT.Zheng; N-Hellgren and J.-E.Sundgren( Dept. of Materials Science, Jilin Univer-sity Changchun 13oo23, China)(Dept. of Physics, Linkoping University, S-581 83 Linkoping, Sweden)   

  • Received:1998-05-28 Revised:1998-05-28 Online:1998-05-28 Published:2009-10-10

Abstract: Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature.