J. Mater. Sci. Technol. ›› 2019, Vol. 35 ›› Issue (8): 1706-1711.DOI: 10.1016/j.jmst.2019.03.034

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P-type SnO thin films prepared by reactive sputtering at high deposition rates

C. Guillén*(), J. Herrero   

  1. Department of Energy, CIEMAT, Avda. Complutense 40, Edif. 42, Madrid, 28040, Spain
  • Received:2018-11-22 Revised:2018-12-18 Accepted:2019-01-26 Online:2019-08-05 Published:2019-06-19
  • Contact: Guillén C.
  • About author:

    1The authors contributed equally to this work.

Abstract:

SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide (SnOx) thin films were deposited on unheated soda lime glass substrates by reactive DC sputtering from a pure Sn target. The structural, optical and electrical properties of the films were analysed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air. A structural analysis was carried out using Raman spectroscopy and X-ray diffraction. Optical and electrical characterizations were performed using photo-spectrometry and Hall effect measurements, respectively. The films grown at room temperature and low oxygen pressures reached high deposition rates of above 45 nm/min, showing poorly crystalline SnO and low transparency. Subsequent heating to 350 °C allowed to achieve a more crystalline tetragonal SnO with an average visible transmittance of 65%, a p-type conductivity of 0.8 S/cm, and a hole mobility of 3.5 cm2/(V s).

Key words: Transparent conducting oxide (TCO), Nanocrystalline structure, Optical absorption, Hole mobility