Achieving the high phase purity of CH3NH3PbI3 film by two-step solution processable crystal engineering

doi:10.1016/j.jmst.2017.11.003

Abstract

Abstract:

To date, it is still a great challenge for highly efficient perovskite devices to realize the high quality perovskite films with high purity, high coverage ratio and good crystallization by two-step scalable solution method. In this study, a series PbI₂ films with tunable micro-architecture of PbI₂ crystals are prepared via solution processable crystal engineering. The perovskite film, prepared by optimized pit spacing in gas pumped PbI₂ film at 1000?Pa, shows the highest film quality, including no residual PbI₂ phase, compact morphology, and improved photoluminescence intensity. A transformation kinetics shows that the pit spacing strongly influences both the mass transfer and the sequential intercalation reaction between CH₃NH₃I and PbI₂ crystals, which ultimately determines the full reaction state of the perovskite film. The perovskite solar cells assembled by the perovskite film show both high power-conversion efficiency and good reproducibility of photovoltaic performance due to the restrained charge recombination arising from the high quality perovskite film.

Key words: High phase purity, CH₃NH₃PbI₃ film, Two-step solution method, Perovskite solar cells

Yan Li, Bin Ding, Guan-Jun Yang, Chang-Jiu Li, Cheng-Xin LiState. Achieving the high phase purity of CH₃NH₃PbI₃ film by two-step solution processable crystal engineering[J]. J. Mater. Sci. Technol., 2018, 34(8): 1405-1411.

Figures/Tables 9

Fig. 1. Surface morphologies and the cross sectional view of PbI2 films and the corresponding perovskite films: (a) PbI2-N.D., (b) PbI2-H.P., (c) PbI2-M.P., (d) PbI2-L.P., (e) PVK-N.D., (f) PVK- H.P., (g) PVK- M.P. and (h) PVK- L.P., where N.D. refers to natural drying; H.P. refers to high pressure drying; M.P. refers to middle pressure drying; L.P. refers to low pressure drying. The typical pit spacing of each PbI2 film is marked with red signs. (For interpretation of the references to colour in this figure legend, the reader is referred to the web version of this article.)

Fig. 2. High magnification of PbI2-M.P. film (a) and the corresponding pit spacing (PS) distribution (b).

Fig. 3. XRD patterns of the FTO substrate, the PbI2-N.D. film and the various perovskite films. These data were collected using PbI2 and perovskite films formed on FTO substrates.

Fig. 4. UV-vis absorption spectrums (a) and the steady-state PL spectra (b) of the perovskite films with the architecture of perovskite film/glass.

Fig. 5. Schematic illustration of the transformation kinetics of PbI2 films with various microstructures: (a) PbI2 films with various microstructures: compact PbI2 film, 1/2 PS > FT and 1/2 PS＜FT (from left to right), (b) the diffusion path of CH3NH3I, (c), (d) and (e) the reaction processes with prolonging the dipping time.

Fig. 6. Calculated results of the residual PbI2 in PVK-M.P. film and PVK-H.P. film according to the XRD patterns under different dipping time.

Fig. 7. J-V curves of the best PSCs assembled by PVK-N.D., PVK-H.P., PVK-M.P. and PVK-L.P under forward and reverse scan mode, where F. refers to forward scan mode, and R. refers to the reverse scan mode.

Fig. 8. Photovoltaic parameters distributions of PSCs assembled by PVK-H.P. and PVK-M.P.: (a) Jsc, (b) Voc, (c) FF and (d) PCE.

Fig. 9. Nyquist plots of PSCs assembled by PVK-H.P. and PVK-M.P. under a bias voltage of 400?mV (a), where scattered point: experimental data (Exp.), and solid line: fitting results (Fit.). The equivalent circuit is employed to fit the results (the inset of (a)). Plots of the recombination resistance (Rct) vs. bias voltages for both PSCs (b).

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Achieving the high phase purity of CH₃NH₃PbI₃ film by two-step solution processable crystal engineering

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