J. Mater. Sci. Technol. ›› 2018, Vol. 34 ›› Issue (8): 1259-1272.DOI: 10.1016/j.jmst.2018.01.011
• Orginal Article • Next Articles
Xiaoyi Wanga, Yulong Liaoab(), Dainan Zhangb, Tianlong Wenb, Zhiyong Zhongb()
Received:
2017-09-21
Revised:
2017-12-15
Accepted:
2017-12-21
Online:
2018-08-17
Published:
2018-08-21
Xiaoyi Wang, Yulong Liao, Dainan Zhang, Tianlong Wen, Zhiyong Zhong. A review of Fe3O4 thin films: Synthesis, modification and applications[J]. J. Mater. Sci. Technol., 2018, 34(8): 1259-1272.
Fig. 2. Height AFM images of the deposits obtained at a substrate temperature of 750?K and upon irradiation at: (a) 213?nm, (b) 532?nm and (c) 1064?nm. All the images are 80?nm high and the scale bar is 500?nm [50].
Fig. 3. Dependence of the magnetization on temperature (warming curves) with an in-plane applied field of 2?kOe for magnetite films fabricated at a substrate temperature of 750?K and a deposition wavelength: (a) 213?nm, (b) 532?nm, and (c) 1064?nm. Inset to (b) presents the determination of the corresponding Verwey temperature by taking the temperature at which the maximum slope of the magnetization takes place [50].
Fig. 4. RHEED pattern along the 〈110〉 and SEM image for a 1.7?nm layer grown (a) by MBE and (b) by PLD and for a 7.5?nm layer grown (c) by MBE and (d) by PLD. The layer grown by MBE revealed a 2D growth, whereas the layer grown by PLD revealed an island growth. As a reference, the RHEED pattern along the 〈110〉 direction for a clean substrate is shown in the center of the figure [10].
Fig. 5. AFM 2D images (2?μm?×?2?μm) and the corresponding height profiles along the solid lines in the 2D images of the Al2O3 substrate and the Fe3O4 films: (a) Al2O3 substrate; (b)-(f) 2?u.c., 10?u.c., 40?u.c., 100?u.c. and 200?u.c. Fe3O4 film, respectively [60].
Sample | Thickness (nm) | Strain relaxation predicted by FKR model (%) | Observed strain relaxation (%) |
---|---|---|---|
Fe3O4/MgAl2O4 | 40 | 87 | 60 |
60 | 91 | 84 | |
120 | 95 | 95.6 |
Table 1 Summary of the predicted and observed strain relaxation values for the epitaxial magnetite films as a function of film thickness [61].
Sample | Thickness (nm) | Strain relaxation predicted by FKR model (%) | Observed strain relaxation (%) |
---|---|---|---|
Fe3O4/MgAl2O4 | 40 | 87 | 60 |
60 | 91 | 84 | |
120 | 95 | 95.6 |
Fig. 6. SEM images of the Fe3O4 particles grown at -1.15?V (Ag/AgCl) for different period of time of (a) 0, (b) 200, (c) 400, (d) 600, (e) 800, and (f) 1000?s [68].
Fig. 7. (a) HRTEM overview image of the Fe3O4/SrTiO3 heterostructure showing uniform film thickness of ~80?nm and a sharp interface between film and substrate. (b) SAD pattern from the interface region. The Fe3O4 and SrTiO3 motifs are outlined (Fe3O4 in red, SrTiO3 in green). (c, d) show SAD simulations of Fe3O4 (red) and SrTiO3 (green) depending on whether the Fe3O4 structure is mirrored around the vertical axis. (c) SAD along the [-110] viewing direction for both SrTiO3 and Fe3O4. (d) SAD along the [-110] viewing direction for SrTiO3 and the [1-10] viewing direction for Fe3O4. The correspondence between (b, d) shows that the Fe3O4 is mirrored from direct cube on cube epitaxy [96].
Fig. 8. (a) Illustration of the self-template process for growing (001)-oriented Fe3O4 films on a SrTiO3(001) substrate. (b) Temperature history of the self-template Fe3O4 film growth process, with gray shading denoting the deposition periods of the 8?nm template layer at 400?°C and the main 142?nm film at 900?°C. The arrows mark the start and end points of each deposition step. The dotted line represents the minimum measurement temperature ofthe infrared optical pyrometer used for process control [38].
Fig. 9. (a) Low magnification cross-sectional TEM image of an 8?nm thick film showing its homogeneity in thickness and structure. (b) Cross-sectional HRTEM image of the same 8?nm thick Fe3O4 (111) film deposited on Al2O3(0001) containing an APB [102].
Fig. 10. Resistivity curves for a selection of Fe3O4(111) films 50, 15, 8, and 5?nm in thickness. The measurements in the main figure were taken using a four-probe setup, whereas the curves for the 8 and 5?nm films shown in the inset were obtained by a two-probe setup in order to measure down to 40?K [102].
Fig. 11. Room temperature hysteresis loops of magnetite thin films deposited on Si(100), MgO(100) and quartz substrates at 400?°C substrate temperature [46].
Fig. 15. (a) Current density versus voltage (J-V) characteristics of PSCs measured under 100?mW?cm-2 AM 1.5?G illumination. (b) IPCE spectra of PSCs [154].
Interferent | Current ratio (%) | Interferent | Current ratio (%) | Interferent | Current ratio (%) |
---|---|---|---|---|---|
Sucrose | 5.60 | Glycine | 4.55 | Mg(NO3)2 | 0.85 |
D-fructose | 4.10 | Histamine | 0.09 | CaCl2 | 4.64 |
D-(+)-maltose | 1.08 | Fumaric acid | 2.12 | Al2(SO4)3 | 0.88 |
β-d-lactose | 0.02 | Caffeine | 0.10 | BSAa | 3.18 |
D-(+)-glucose | 0.79 | Citric acid | 3.89 | KCl | 2.37 |
Na2CO3 | 0.05 | Mannose | 2.09 | Xanthan guma | 0.04 |
NaClc | 1.57 | Dopamine | 0.06 | Ascorbic acid | 0.20 |
Uric acid | 0.40 | Caseinb | 1.60 | β-lactogluboina | 5.86 |
KH2PO4c | 1.86 | Na2HPO4c | 2.03 |
Table 2 Effects of different interferents on H2O2 determination by our sensor [160].
Interferent | Current ratio (%) | Interferent | Current ratio (%) | Interferent | Current ratio (%) |
---|---|---|---|---|---|
Sucrose | 5.60 | Glycine | 4.55 | Mg(NO3)2 | 0.85 |
D-fructose | 4.10 | Histamine | 0.09 | CaCl2 | 4.64 |
D-(+)-maltose | 1.08 | Fumaric acid | 2.12 | Al2(SO4)3 | 0.88 |
β-d-lactose | 0.02 | Caffeine | 0.10 | BSAa | 3.18 |
D-(+)-glucose | 0.79 | Citric acid | 3.89 | KCl | 2.37 |
Na2CO3 | 0.05 | Mannose | 2.09 | Xanthan guma | 0.04 |
NaClc | 1.57 | Dopamine | 0.06 | Ascorbic acid | 0.20 |
Uric acid | 0.40 | Caseinb | 1.60 | β-lactogluboina | 5.86 |
KH2PO4c | 1.86 | Na2HPO4c | 2.03 |
Fig. 16. (a) MRxx plotted versus the magnetic field H applied perpendicular to the film plane at different temperatures for Zn0.1Fe2.9O4 thin films grown in pure Ar atmosphere. (b) MRxx(H) curves measured at 300?K for different ZnxFe3-xO4 grown in pure Ar atmosphere (left) or an Ar/O2 mixture (right) [12].
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