J. Mater. Sci. Technol. ›› 2018, Vol. 34 ›› Issue (12): 2392-2397.DOI: 10.1016/j.jmst.2018.05.018
• Orginal Article • Previous Articles Next Articles
Xiaoqi Menga, Changjiang Zhaoa, Boxu Xua, Pei Wangb, Juncheng Liua*()
Received:
2017-07-30
Revised:
2017-09-13
Accepted:
2017-11-03
Online:
2018-12-20
Published:
2018-11-15
Contact:
Liu Juncheng
Xiaoqi Meng, Changjiang Zhao, Boxu Xu, Pei Wang, Juncheng Liu. Effects of the annealing temperature on the structure and up-conversion photoluminescence of ZnO film[J]. J. Mater. Sci. Technol., 2018, 34(12): 2392-2397.
Annealing temperature | Grain size (nm) | FWHMs | ||
---|---|---|---|---|
(100) | (002) | (101) | ||
700?°C | 23.9 | 0.429 | 0.587 | 0.570 |
800?°C | 23.0 | 0.319 | 0.403 | 0.341 |
900?°C | 34.9 | 0.225 | 0.325 | 0.236 |
1000?°C | 38.5 | 0.224 | 0.284 | 0.245 |
Table 1 FWHMs of the diffraction peaks and the average grain sizes of ZnO films.
Annealing temperature | Grain size (nm) | FWHMs | ||
---|---|---|---|---|
(100) | (002) | (101) | ||
700?°C | 23.9 | 0.429 | 0.587 | 0.570 |
800?°C | 23.0 | 0.319 | 0.403 | 0.341 |
900?°C | 34.9 | 0.225 | 0.325 | 0.236 |
1000?°C | 38.5 | 0.224 | 0.284 | 0.245 |
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