[1] D.Leonard, M.Krishnamurthy, C.M.Reaves,S.P.Denbaars and P.M.Petroff: Appl. Phys. Lett.,1993, 63, 3203. [2] J.M.Moison, F.Houzay and F.Barthe: Appl. Phys.Lett., 1994, 64, 196. [3] S.Ruvimov, P.Werner, K.Scheerschmidt, U.Gosele,J .Heydenreich, U. Richter, N. Ledentsov, M. Grundmann,D.Bimberg, V.Ustinov, A.Egorov, P.Kop'ev andZ.Alferov: Phys. Rev. B, 1995, 51, 14766. [4] M.Grundmann, N.N.Kendentosv, O.Stier, D.Dimberg,V.M.Ustinov, P.S.Kopev and Zh.I Alferov: Appl.Phys. Lett., 1996, 68, 979. [5] S.Guha, A.Madhukar and K.C.Rajkumar: Appl.Phys. Lett., 1990, 57, 2110. [6] J.Terserf, C.Teichert and M.G.Lagally: Phys. Rev.Lett., 1996, 76, 1675. [7] D.Leonard, K.Pond and P.M.Petroff: Phys. Rev. B,1994, 50, 11687. [8] G.S.Solomon, J.A.Trezza and J.S.Harris: J. Appl.Phys. Lett., 1995, 66, 3161. [9] G.S.Solomon, J.A.Trezza and J.S.Harris: J. Appl.Phys. Lett., 1995, 66, 991. [10] R.Notzel, J.Temmyo, H.Kamada, T.Furuta andT.Tamamura: Appl. Phys. Lett., 1994, 65, 457. [11] M.Henini, S.Sanguinetti, L.Brusaferri, E.Grilli,M.Guzzi, M.Upward, P.Moriarty and P.Beton: Microelec. J., 1997, 28, 933. [12] V.M.Ustinov, A.Yu.Egorov, A.R.Kovsh, A.E.Zhukov,M.V. Maximov, A.F.Tsatsul'nikov, N.Yu.Gordeev,D.Bimberg and U.Gosele: J. Cryst. Growth, 1997,175/176, 689. [13] K.Kamath, P.Bhattacharya and J.Phillips: J. Cryst.Growth, 1997, 175/176, 720. [14] R.Notzel, T.Fukui, H.Hasegawa, T.Temmyo andT.Tamamura: Appl. Phys. Lett., 1994, 65, 2854. [15] Y.T.Chun, S.Nakajima and M.Kawabe: Jpn. J. Appl.Phys., 1996, 35, L1075. [16] K.Nishi, T.Anan, A.Gomyo, S.Kohmoto and S.Suguo:Appl. Plys. Lett., 1997, 70, 3579. [17] Huaizhe XU, Wei ZHOU, Bo XU, Weihong JIANG,Qian GONG, Ding DING and Zhanguo WANG: Appl.Surr Sci., 1999, 141, 101. [18] R.Notzel, J.Temmyo and T.Tamamura: Jpn. J. Appl.Phys., 1994, 33, L275. [19] L.Brus: IEEE J. Quantum Electronics, 1986, QE-22,1909. [20] Q.Gong, J.B.Liang, B.Xu, D.Ding, H.X.Li, C.Jiang,W.Zhou, F.Q.Liu, Z.G.Wang, X.H.Qiu, G.Y.Shangand C.L.Bai: J. Cryst. Growth, 1998, 192, 376. |