J Mater Sci Technol ›› 1999, Vol. 15 ›› Issue (04): 386-386.

• Research Articles • Previous Articles     Next Articles

Conductivity Properties of Phosphorus-doped Hydrogenated Nanocrystalline Silicon Film

Ming LIU, Dongfeng FU, Zhou WANG, Yingcai PENG, Yuliang HE   

  1. Microelectronics Research and Development Center, Chinese Academy of Sciences, Beijing 100029, China...
  • Received:1999-01-15 Revised:1999-02-23 Online:1999-07-28 Published:2009-10-10
  • Contact: Ming LIU

Abstract: The conductivity of phosphorus-doped hydrogenated nanocrystalline Si (nc-Si:P:H) films is 10-1-101 W-1˙cm-1, two order of magnitude higher than that of undoped hydrogenated nanocrystalline Si (nc-Si:H) film. A series of conductivity temperature dependence curves show that the kink point temperature almost existing in hydrogenated amorphous Si (a-Si:H) film disappears.

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