Si-based Multielement Thin Film Prepared by r.f. Reactive Sputtering at Room Temperature

J Mater Sci Technol ›› 1999, Vol. 15 ›› Issue (04): 385-385.

• Research Articles • Previous Articles Next Articles

Si-based Multielement Thin Film Prepared by r.f. Reactive Sputtering at Room Temperature

Xiancheng WU, Yinyue WANG, Hui YAN, Guanghua CHEN

Department of Physics, Lanzhou University, Lanzhou 730001, China; Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China

Received:1999-01-15 Revised:1999-03-08 Online:1999-07-28 Published:2009-10-10
Contact: Yinyue WANG

Abstract

Abstract: a-Si:C:N:H thin films have been deposited at room temperature by r.f. reactive-sputtering of a Si target in an Ar+H2+N2+CH4 gas mixture. Fourier transform infrared-absorption spectroscopy and optical absorption spectra have been investigated for the films. The study shows that the film structure and optical, electrical properties are obviously modified readily by controlling the process parameters of deposition. The nitrogen-rich a-Si:C:N:H films are thermally stable within the temperature ranging from 200 to 800°C. They are of interest for the potential applications in electronic devices.

Key words:

Xiancheng WU, Yinyue WANG, Hui YAN, Guanghua CHEN. Si-based Multielement Thin Film Prepared by r.f. Reactive Sputtering at Room Temperature[J]. J Mater Sci Technol, 1999, 15(04): 385-385.

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Si-based Multielement Thin Film Prepared by r.f. Reactive Sputtering at Room Temperature

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