J Mater Sci Technol ›› 1999, Vol. 15 ›› Issue (04): 383-383.

• Research Articles • Previous Articles     Next Articles

Effect of the Transient Response in Si/Ge Parallelizing PN Junction

Weiqi HUANG, Chaogang CHEN, Ergang CHEN   

  1. Department of Physics, Guizhou Educational College, Guiyan 550003, China...
  • Received:1999-01-15 Revised:1999-03-16 Online:1999-07-28 Published:2009-10-10
  • Contact: Weiqi HUANG

Abstract: There are some new results about photovoltaic transient response in the new effect. We suggest a theoretical model to explain the effect reasonably. The theoretical calculation results agree with that in experiments.

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